Origin of Topological Hall‐Like Feature in Epitaxial SrRuO 3 Thin Films
[1];
[2]
- Department of Materials Design and Innovation University at Buffalo – The State University of New York Buffalo NY 14260 USA, Center for Integrated Nanotechnologies (CINT) Los Alamos National Laboratory Los Alamos NM 87545 USA
- Center for Integrated Nanotechnologies (CINT) Los Alamos National Laboratory Los Alamos NM 87545 USA
- Center for Nanoscale Materials Argonne National Laboratory Lemont IL 60439 USA
- Department of Physics &, Texas Center for Superconductivity University of Houston Houston TX 77204 USA
- Department of Physics Kyungpook National University Daegu 41566 South Korea
- Department of Materials Science and Engineering Carnegie Mellon University Pittsburgh PA 15213 USA
- Department of Materials Design and Innovation University at Buffalo – The State University of New York Buffalo NY 14260 USA
- T‐4 &, Center for Integrated Nanotechnologies (CINT) T‐4 Los Alamos National Laboratory Los Alamos NM 87545 USA
- National High Magnetic Field Lab Los Alamos National Laboratory Los Alamos NM 87545 USA
- Department of Physics University at Buffalo – The State University of New York Buffalo NY 14260 USA
- MPA‐Q Los Alamos National Laboratory Los Alamos NM 87545 USA
The discovery of topological Hall effect (THE) has important implications for next-generation high-density nonvolatile memories, energy-efficient nanoelectronics, and spintronic devices. Both real-space topological spin configurations and two anomalous Hall effects (AHE) with opposite polarity due to two magnetic phases have been proposed for THE-like feature in SrRuO3 (SRO) films. In this work, SRO thin films with and without THE-like features are systematically Investigated to decipher the origin of the THE feature. Magnetic measurement reveals the coexistence of two magnetic phases of different coercivity (Hc) in both the films, but the hump feature cannot be explained by the two channel AHE model based on these two magnetic phases. In fact, the AHE is mainly governed by the magnetic phase with higher Hc. A diffusive Berry phase transition model is proposed to explain the THE feature. The coexistence of two Berry phases with opposite signs over a narrow temperature range in the high Hc magnetic phase can explain the THE like feature. Such a coexistence of two Berry phases is due to the strong local structural tilt and microstructure variation in the thinner films. This work provides an insight between structure/micro structure and THE like features in SRO epitaxial thin films.
- Research Organization:
- Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF)
- Grant/Contract Number:
- 89233218CNA000001; AC02-06CH11357; ECCS-1902623
- OSTI ID:
- 1971266
- Alternate ID(s):
- OSTI ID: 1972997; OSTI ID: 1983411
- Report Number(s):
- LA-UR-23-23795; 2300020
- Journal Information:
- Advanced Electronic Materials, Journal Name: Advanced Electronic Materials; ISSN 2199-160X
- Publisher:
- Wiley Blackwell (John Wiley & Sons)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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