Group-V acceptor ionization energies and compensation centers in CdTe revisited

Conference · Thu Oct 28 00:00:00 EDT 2021

DOI:https://doi.org/10.2172/1970701· OSTI ID:1970701

Chatratin, Intuon ^[1]; Evangelista, Igor ^[2]; Janotti, Anderson ^[2]

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1. University of Delaware; University of Delaware
2. University of Delaware

Group-V acceptor ionization energies and compensation centers in CdTe revisited: Spin-orbit coupling is crucial to describe the band structure of CdTe and the properties of group-V acceptors in CdTe; explains the difference between present work and previous calc. P, As, and Sb are shallow acceptors in CdTe, with the ionization energies ~100 meV, in agreement with recent Hall measurements in bulk crystals AX center is not the dominant compensation center in p-type CdTe; unstable in the case of As and P, barely stable in the case of Sb doping Intrinsic defects, such as VTe, are potentially important compensation centers Cdi is unstable with low migration barrier

• Research Organization: University of Delaware
• Sponsoring Organization: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
• DOE Contract Number: EE0009344
• OSTI ID: 1970701
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE