Remote epitaxy and selective epitaxy on vdW materials for layer transfer

Conference · Fri Jul 08 04:00:00 EDT 2022

OSTI ID:1961516

Kim, Hyunseok ^[1]

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1. Massachusetts Institute of Technology

Remote epitaxy is recently gaining huge attention forthe growth of single-crystal thin films and their isolation from the substrate for heterogeneous integration.Despite the recent progress, there are challenges inengineering the interface and optimizing the materialquality. Here, we introduce two approaches that could overcome the issues. As the first approach, we show directly grown 2D materials as a template for remote epitaxy of III-V and III-N materials. This ensuresa pristine interface without transfer process-related contaminations and damages. Second, we show theuse of nanopatterned graphene for selective epitaxyand lateral overgrowth of single-crystal films. This allows for the use of materials as substrates and epilayers which is not possible in remote epitaxy.

• Research Organization: Massachusetts Institute of Technology
• Sponsoring Organization: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
• DOE Contract Number: EE0008558
• OSTI ID: 1961516
• Report Number(s): DOE-MIT-EE0008558-2
• Country of Publication: United States
• Language: English