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The change of optical, electrical and structural properties of sputtered indium tin oxide films by application of a new reactive sputter atmosphere

Book ·
OSTI ID:194861
;  [1]
  1. Humboldt-Univ., Berlin (Germany). Inst. of Physical and Theoretical Chemistry

Highly qualitative indium tin oxide (ITO) films were deposited by reactive dc-sputter technique on glass and quartz substrates. Both pure H{sub 2}O vapor and pure O{sub 2} have been used as reactive sputtering atmosphere. The optical constants refractive index and absorption coefficient were calculated from reflection and transmission spectra in the infrared (IR) region. Using the Drude theory the electrical parameters free carrier concentration and carrier mobility of the ITO-films were contactless determined from IR reflection spectra. The dc-H{sub 2}O-sputtered ITO-films show improved optical and electrical properties. For application as transparent window material they distinguish by high visual (VIS) transmittance and high IR-reflectance. Moreover these ITO-films show a high free carrier concentration of N = 6 {times} 10{sup 20}cm{sup {minus}3} directly after deposition compared with N = 4{times}10{sup 20}cm{sup {minus}3} for dc-O{sub 2}-sputtered ITO-films after thermal annealing. The differences between optical and electrical properties of dc-O{sub 2}{sup {minus}} and dc-H{sub 2}O-sputtered ITO-films are discussed in regard to their crystal structure and surface morphology.

OSTI ID:
194861
Report Number(s):
CONF-9404167--; ISBN 0-8194-1564-2
Country of Publication:
United States
Language:
English