Electrical and optical properties of radio-frequency-sputtered thin films of (ZnO){sub 5}In{sub 2}O{sub 3}

Journal Article · Thu Oct 01 04:00:00 EDT 1998 · Chemistry of Materials

DOI:https://doi.org/10.1021/cm980173b· OSTI ID:675625

Hiramatsu, Hidenori; Seo, W S; Koumoto, Kunihito ^[1]

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1. Nagoya Univ. (Japan)

c-Axis oriented thin films of (ZnO){sub 5}In{sub 2}O{sub 3} of 0.5 {micro}m thickness were deposited on glass substrates by a radio-frequency-sputtering method. The thin films had dense columnar structures and were highly transparent in the ultraviolet-visible region, simultaneously showing low electrical resistivity. The refractive index was about 2. The lowest resistivity, 1.3 {times} 10{sup {minus}3} {Omega} cm at room temperature, was obtained by reducing the deposited film at 540 C in N{sub 2} containing 3.4% H{sub 2} The corresponding carrier concentration and Hall mobility were 1.9 {times} 10{sup 20} cm{sup {minus}3} and 25.6 cm{sup 2}/Vs, respectively. Detailed analyses of the optical transmittance spectra gave rise to the intrinsic band gap and the reduced mass of carriers to be 3.12 eV and 0.67 m{sub 0}, respectively.

• OSTI ID: 675625
• Journal Information: Chemistry of Materials, Journal Name: Chemistry of Materials Journal Issue: 10 Vol. 10; ISSN CMATEX; ISSN 0897-4756
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CARRIER DENSITY
CARRIER MOBILITY
ELECTRIC CONDUCTIVITY
ENERGY GAP
INDIUM OXIDES
REFRACTIVE INDEX
SOLAR CELLS
VAPOR DEPOSITED COATINGS
ZINC OXIDES