Reactively sputtered thermochromic tungsten doped VO{sub 2} films

Book · Sat Dec 31 04:00:00 EST 1994

OSTI ID:194842

Sobhan, M A; Kivaisi, R T; Stjerna, B; Granqvist, C G ^[1]

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1. Uppsala Univ. (Sweden). Dept. of Technology

Tungsten-doped vanadium oxide (V{sub 1{minus}x}W{sub x}O{sub 2}) films were prepared by concurrent reactive dc magnetron sputtering of vanadium and tungsten in an Ar + O{sub 2} plasma with a controlled oxygen partial pressure. Films were deposited onto glass substrates at 400 C. The films had a metal-semiconductor transition at a temperatures {tau}{sub t} that was depressed when x was increased. Rutherford Back Scattering was used to determine x. X-ray diffraction was employed to confirm the monoclinic low-temperature VO{sub 2} phase. The relation between x and {tau}{sub t} was studied and compared with results from the literature. It was shown that {tau}{sub t} could be set to a value between 17 and 65 C by proper choice of x. The optical and electrical properties of the films were investigated around the metal-semiconductor phase transition. The luminous transmittance was rather unaffected by the temperature, whereas the near infrared transmittance showed lower values above {tau}{sub t}. The degree of thermochromic modulation decreased for increased x. Electrical measurements showed that the ratio of the resistance above and below {tau}{sub t} decreased with increasing x.

• OSTI ID: 194842
• Report Number(s): CONF-9404167--; ISBN 0-8194-1564-2
• Country of Publication: United States
• Language: English

Related Subjects

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATION
36 MATERIALS SCIENCE
BUILDINGS
DOPED MATERIALS
ELECTRICAL PROPERTIES
ENERGY CONSERVATION
EXPERIMENTAL DATA
OPTICAL PROPERTIES
SEMICONDUCTOR MATERIALS
SOLAR CONTROL FILMS
TEMPERATURE DEPENDENCE
TUNGSTEN OXIDES
VANADIUM OXIDES
WINDOWS