Radiation effects at cryogenic temperatures in Si-JEFT, GaAs MESFET, and MOSFET devices
Journal Article
·
· IEEE Transactions on Nuclear Science
- Brookhaven National Lab., Upton, NY (United States)
Front-end electronics for liquid ionization chamber calorimetry at hadron collider experiments may be exposed to substantial levels of ionizing radiation and neutron fluences in a cryogenic environment. Measurements of devices built with rad-hard technologies have shown that devices able to operate in these conditions exist. Several families of devices (Si-JFET`s, rad-hard MOSFET`s, and GaAs MESFET`s) have been irradiated and tested at a stable cryogenic temperature up to doses of 55 Mrad of ionizing radiation and up to neutron fluences of 4 {times} 10{sup 14} n/cm{sup 2}. Radiation effects on dc characteristics and on noise will be presented.
- Research Organization:
- Brookhaven National Laboratory (BNL), Upton, NY
- DOE Contract Number:
- AC02-76CH00016
- OSTI ID:
- 194792
- Report Number(s):
- CONF-941061--
- Journal Information:
- IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 6Pt2 Vol. 42; ISSN 0018-9499; ISSN IETNAE
- Country of Publication:
- United States
- Language:
- English
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