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Reciprocal-Space Analysis of Compositional Modulation in Short-Period Superlattices Using Position-Sensitive X-Ray Detection

Journal Article · · Journal of Materials Science: Materials in Electronics
OSTI ID:1940

Epitaxial growth of AlAs-InAs short-period superlattices on (001) InP can lead to heterostructures exhibiting strong, quasi-periodic, lateral modulation of the alloy composition; transverse satellites arise in reciprocal space as a signature of the compositional modulation. Using an x-ray diffractometer equipped with a position-sensitive x-ray detector, we demonstrate reciprocal-space mapping of these satellites as an efficient, nondestructive means for detecting and characterizing the occurrence of compositional modulation. Systematic variations in the compositional modulation due to the structural design and the growth conditions of the short-period superlattice are characterized by routine mapping of the lateral satellites. Spontaneous compositional modulation occurs along the growth front during molecular-beam epitaxy of (AlAs) (InAs)n short-period superlattices. The modulation is quasi-periodic and forms a lateral superlattice superimposed on the intended SPS structure. Corresponding transverse satellites arise about each reciprocal lattice point, and x-ray diffraction can be routinely used to map their local reciprocal-space structure. The integrated intensity, spacing, orientation, and shape of these satellites provide a reliable means for nondestructively detecting and characterizing the compositional modulation in short-period superlattices. The analytical efficiency afforded by the use of a PSD has enabled detailed study of systematic vacations in compositional modulation as a function of the average composition, the period, and the growth rate of the short- period superlattice

Research Organization:
Sandia National Laboratories, Albuquerque, NM, and Livermore, CA
Sponsoring Organization:
USDOE
DOE Contract Number:
AC04-94AL85000
OSTI ID:
1940
Report Number(s):
SAND98-2512J; ON: DE00001940
Journal Information:
Journal of Materials Science: Materials in Electronics, Journal Name: Journal of Materials Science: Materials in Electronics
Country of Publication:
United States
Language:
English

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