Fundamentals of Defect-Free III-V Growth on Oxide-Nanopatterned GaAs Substrates

Conference · Tue Feb 07 23:00:00 EST 2023

OSTI ID:1924446

McMahon, Bill

This talk describes the fundamentals underlying defect-free growth of large-area III-V devices on oxide-nanopatterned GaAs substrates, and applies them to the growth of 24.8% efficient GaAs solar cells with a dislocation density less than 5 x 10^5 cm^-2. In this application the nanopatterned oxide layer serves as a mechanically-weak layer for substrate separation and reuse, but in other applications it could serve as an optical element to diffract or redirect light. This presentation focuses on how the topology and dimensions of the oxide mask must be controlled to avoid defect formation wherever the epilayer coalesces over a mask feature.

• Research Organization: National Renewable Energy Laboratory (NREL), Golden, CO (United States)
• Sponsoring Organization: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
• DOE Contract Number: AC36-08GO28308; AC36-08GO28308
• OSTI ID: 1924446
• Report Number(s): NREL/PR-5900-82733; MainId:83506; UUID:5f21105c-8b75-4a68-99b1-1961b63bcc0a; MainAdminID:68708
• Country of Publication: United States
• Language: English

Related Subjects

ENGINEERING
SOLAR ENERGY
GaAs
III-V
PV
oxide nanopatterned
substrate reuse
substrate separation