Understanding Improvements in Coalesced Epilayers Grown over Nanopatterned Substrates
Nanopatterned substrates provide opportunities for reducing costs of high-efficiency III-V devices through methods such as substrate reuse and growth on cheaper substrates. In this work, we aim to better understand some of the fundamental challenges of growing high quality III-V material on nanopatterned substrates. Through specific pattern orientations and control of overgrowth morphology, we report that smooth and defect-free coalesced III-V epilayers are attainable over nanopatterned GaAs substrates.
- Research Organization:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
- DOE Contract Number:
- AC36-08GO28308
- OSTI ID:
- 1823569
- Report Number(s):
- NREL/CP-5900-78961; MainId:32878; UUID:2d072915-b43b-4fc1-b86a-b342b778e343; MainAdminID:24605
- Country of Publication:
- United States
- Language:
- English
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