Understanding Improvements in Coalesced Epilayers Grown over Nanopatterned Substrates

Conference · Thu Aug 26 00:00:00 EDT 2021

DOI:https://doi.org/10.1109/PVSC43889.2021.9518463· OSTI ID:1823569

Mangum, John S. ; Theingi, San; McMahon, William E.; Warren, Emily L.

Nanopatterned substrates provide opportunities for reducing costs of high-efficiency III-V devices through methods such as substrate reuse and growth on cheaper substrates. In this work, we aim to better understand some of the fundamental challenges of growing high quality III-V material on nanopatterned substrates. Through specific pattern orientations and control of overgrowth morphology, we report that smooth and defect-free coalesced III-V epilayers are attainable over nanopatterned GaAs substrates.

• Research Organization: National Renewable Energy Lab. (NREL), Golden, CO (United States)
• Sponsoring Organization: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
• DOE Contract Number: AC36-08GO28308
• OSTI ID: 1823569
• Report Number(s): NREL/CP-5900-78961; MainId:32878; UUID:2d072915-b43b-4fc1-b86a-b342b778e343; MainAdminID:24605
• Resource Relation: Conference: Presented at the 2021 IEEE 48th Photovoltaic Specialists Conference (PVSC), 20-25 June 2021
• Country of Publication: United States
• Language: English

Related Subjects

SOLAR ENERGY
coalescense
defect characterization
GaAs
III-V
nanopatterned substrates
photovoltaic
PV