Improving the short-wave infrared response of strained GeSn/Ge multiple quantum wells by rapid thermal annealing

Zhao, Haochen; Lin, Guangyang; Han, Chaoya; Hickey, Ryan; Zhama, Tuofu; Cui, Peng; Deroy, Tienna; Feng, Xu; Ni, Chaoying; Zeng, Yuping

doi:10.1016/j.vacuum.2023.111868

Improving the short-wave infrared response of strained GeSn/Ge multiple quantum wells by rapid thermal annealing

Journal Article · Tue Jan 24 00:00:00 EST 2023 · Vacuum

DOI:https://doi.org/10.1016/j.vacuum.2023.111868· OSTI ID:1923668

^[1]; Lin, Guangyang ^[2]; Han, Chaoya ^[3]; Hickey, Ryan ^[3]; Zhama, Tuofu ^[3]; Cui, Peng ^[3]; Deroy, Tienna ^[3]; Feng, Xu ^[3]; Ni, Chaoying ^[2]; ^[3]

Univ. of Delaware, Newark, DE (United States); University of Delaware
Xiamen Univ., Fujian (China)
Univ. of Delaware, Newark, DE (United States)

In this work, the evolution of structural, optical and optoelectronic properties of coherently strained Ge_0.883Sn_0.117/Ge multiple quantum wells (MQWs) grown by molecular beam epitaxy under rapid thermal annealing (RTA) is systematically investigated. The MQW structure remains fully-strained state with RTA at 400 °C or below and disrupts at higher annealing temperatures due to Sn segregation and interdiffusion of Ge and Sn atoms. The GeSn well layers exhibit the strongest absorption in 2.0–2.4 μm after annealing at 400 °C and become transparent above 1.8 μm after RTA at 600 °C or beyond due to serve Sn segregation. Owing to improved crystal quality after RTA at 400 °C, the dark current of the fabricated metal-semiconductor-metal photodetector is effectively lowered by more than two times. Additionally, the responsivities at 1.55 and 2.0 μm are improved by 4.15 and 3.78 folds, respectively, compared to those of the as-grown sample. Here, the results can be an insightful guidance for the development of high-performance short-wave infrared photonic devices based on Sn-containing group-IV low-dimensional structures.

View Accepted Manuscript (DOE)

Research Organization:: Univ. of Arkansas, Fayetteville, AR (United States)

Sponsoring Organization:: NASA; USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0023412

OSTI ID:: 1923668

Journal Information:: Vacuum, Journal Name: Vacuum Vol. 210; ISSN 0042-207X

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

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36 MATERIALS SCIENCE
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Improving the short-wave infrared response of strained GeSn/Ge multiple quantum wells by rapid thermal annealing

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