p-n and n-p GaInAsP solar cells: Technology and material analysis
Conference
·
OSTI ID:191212
- EEV Ltd., Chelmsford (United Kingdom)
- Defence Research Agency, Farnborough (United Kingdom)
Ga{sub x}In{sub 1{minus}x}As{sub y}P{sub 1{minus}y} (1.43 to 1.88 eV bandgap) single junction solar cells, lattice matched to GaAs, can be produced, which are tailored to a particular solar spectrum. This enables the use of GaInAsP cells as high efficiency single junction cells, or as a top cell for either mechanically stacked or monolithically grown tandem cells. In this paper the authors report material properties and large area (4 cm{sup 2}) device performance of p-n and n-p GaInAsP solar cells, for tandem cell applications, grown by MOVPE and gas-source MBE respectively. Planar EBIC imaging, and infrared imaging of the cells in their Light Emitting Diode model to reveal structural defects, is presented.
- OSTI ID:
- 191212
- Report Number(s):
- CONF-941203--; ISBN 0-7803-1459-X
- Country of Publication:
- United States
- Language:
- English
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