First time demonstration of InP p{sup ++}/n{sup ++} tunnel junction

Conference · Sat Dec 31 04:00:00 EST 1994

OSTI ID:191163

Vilela, M F; Freundlich, A; Renaud, P ^[1]; Medelci, N; Bensaoula, A ^[1]

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1. Univ. of Houston, TX (United States). Space Vacuum Epitaxy Center

For the first time an InP p{sup ++}/n{sup ++} tunnel junction is demonstrated. InP tunnel diodes with peak current densities up to 1,600 A/cm{sup 2} and maximum specific resistivities (Vp/Ip--peak voltage to peak current ratio) in the range of 10{sup {minus}4} {Omega} cm{sup 2} were obtained. This high peak current density is comparable to the highest results previously reported for their lattice matched In{sub 0.53}Ga{sub 0.47}As counterparts. This achievement is very important for InP/InGaAs tandem solar cell design due to the very high peak current density which allows concentrator applications and also because the tunnel junction material being the same as the tandem`s top solar cell avoids the optical losses observed when using In{sub 0.53}Ga{sub 0.47}As tunnel junctions. In this paper the authors discuss the device characteristics and the influence of the growth conditions on its performance.

• OSTI ID: 191163
• Report Number(s): CONF-941203--; ISBN 0-7803-1459-X
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
CRYSTAL GROWTH METHODS
ENERGY LOSSES
EPITAXY
FABRICATION
P-N JUNCTIONS
SOLAR CELLS