Chemical beam epitaxy of InP-based solar cells and tunnel junctions
Journal Article
·
· Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)
- Space Vacuum Epitaxy Center, University of Houston, Houston, Texas 77204-5507 (United States)
Chemical beam epitaxy has been utilized to demonstrate high efficiency InGaAs/InP tandem solar cells on InP substrates. The key development in achieving such tandems is the growth of high peak current density InGaAs tunnel junctions for use as interconnect between the top and bottom cells. The growth and performance of the InGaAs bottom cell, the InGaAs tunnel junction, and the InP top cell are first independently presented in the paper. Then the growth of an InP-based tandem cell is described followed by a discussion of its performance.
- OSTI ID:
- 7051030
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States), Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States) Vol. 12:2; ISSN 0734-211X; ISSN JVTBD9
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ALLOYS
ARSENIC COMPOUNDS
ARSENIDES
BERYLLIUM ADDITIONS
BERYLLIUM ALLOYS
DIRECT ENERGY CONVERTERS
EPITAXY
EQUIPMENT
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDE SOLAR CELLS
MOLECULAR BEAM EPITAXY
PERFORMANCE
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SILICON ADDITIONS
SILICON ALLOYS
SOLAR CELLS
SOLAR EQUIPMENT
TEMPERATURE RANGE
TEMPERATURE RANGE 0400-1000 K
TUNNEL DIODES
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ALLOYS
ARSENIC COMPOUNDS
ARSENIDES
BERYLLIUM ADDITIONS
BERYLLIUM ALLOYS
DIRECT ENERGY CONVERTERS
EPITAXY
EQUIPMENT
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDE SOLAR CELLS
MOLECULAR BEAM EPITAXY
PERFORMANCE
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SILICON ADDITIONS
SILICON ALLOYS
SOLAR CELLS
SOLAR EQUIPMENT
TEMPERATURE RANGE
TEMPERATURE RANGE 0400-1000 K
TUNNEL DIODES