Preparation and properties of high quality crystalline silicon films grown by ECR plasma deposition

Book · Sat Dec 31 04:00:00 EST 1994

OSTI ID:191006

DeBoer, S; Dalal, V ^[1]

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1. Iowa State Univ., Ames, IA (United States). Dept. of Electrical and Computer Engineering

A process for growing high quality epitaxial silicon on heavily doped silicon (100) wafers at temperatures below 525 C has been developed using a high vacuum electron cyclotron resonance (ECR) plasma deposition system. Plasma diagnostic work was done in order to optimize the growth conditions. The crystalline quality of the films has been verified using TEM, Raman and UV reflectance. Spreading resistance profiles (SRP) indicate that the undoped films are n-type with free carrier concentrations between 3 {times} 10{sup 16} cm{sup {minus}3} and 3 {times} 10{sup 17} cm{sup {minus}3}. The junction between the heavily doped wafer and the undoped epi layer is shown to be abrupt. The mobilities of the carriers were measured using Hall measurements, and were found to be as high as in the best crystalline materials. This new technique may have significant applications for low cost Si solar cells.

• OSTI ID: 191006
• Report Number(s): CONF-941203--; ISBN 0-7803-1459-X
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
CHEMICAL VAPOR DEPOSITION
CRYSTAL STRUCTURE
ELECTRICAL PROPERTIES
ELECTRON DIFFRACTION
EXPERIMENTAL DATA
HALL EFFECT
HYDROGEN
MATERIALS
RAMAN SPECTROSCOPY
REFLECTIVITY
SILANES
SILICON
SILICON SOLAR CELLS
SURFACE CLEANING
TRANSMISSION ELECTRON MICROSCOPY
ULTRAVIOLET RADIATION