Growth of high quality c-SiGe p-n double layers for high-efficiency solar cells

Conference · Sat Dec 31 04:00:00 EST 1994

OSTI ID:191005

Hansson, P O; Konuma, M; Silier, I; Bauser, E ^[1]; Albrecht, M; Dorsch, W; Strunk, H P ^[2]

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1. Max-Planck-Inst. fuer Festkoerperforschung, Stuttgart (Germany)
2. Univ. Erlangen-Nuernberg, Erlangen (Germany). Inst. fuer Werkstoffwissenschaften 7

The authors have grown Silicon-Germanium alloys and p-n junctions of high crystal quality on Si substrates by LPE from Bi, Ga, and in solutions at temperatures between 300 and 920 C. The layer thicknesses ranged from 1 nm to 100 {micro}m. Doping levels from 1 {times} 10{sup 16} to 4 {times} 10{sup 19} cm{sup {minus}3} were obtainable by using Ga and As as dopants. The carrier mobility values reached 50% of the upper theoretical limit. Average dislocation densities were below 5 {times} 10{sup 8} cm{sup {minus}2}, even for Ge on Si. Growth rates above 60nm/sec were for example achieved on 4 inch substrates. Layers grown from In solution gave the best data for photovoltaic applications.

• OSTI ID: 191005
• Report Number(s): CONF-941203--; ISBN 0-7803-1459-X
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
ARSENIC
BISMUTH
CRYSTAL GROWTH
DISLOCATIONS
DOPED MATERIALS
ELECTRICAL PROPERTIES
GALLIUM
GERMANIUM ALLOYS
HALL EFFECT
INDIUM
LIQUID METALS
LIQUID PHASE EPITAXY
MATERIALS
MICROSTRUCTURE
PHOTOLUMINESCENCE
SCANNING ELECTRON MICROSCOPY
SILICON
SILICON ALLOYS
SOLAR CELLS
TRANSMISSION ELECTRON MICROSCOPY