Properties of silicon thin films grown by the temperature difference method (TDM)
Conference
·
OSTI ID:304372
- Inst. fuer Kristallzuechtung, Berlin (Germany)
In this paper the authors describe the Temperature Difference Method (TDM) as a promising technology for the continuous growth of thin film silicon from the solution on large area polycrystalline substrates (10 x 10 cm{sup 2}). The thermodynamic driving force of the layer growth by TDM is generated by a temperature gradient perpendicular to the substrate surface. Silicon thin films have been grown from In/Ga-solutions at 980 C. A temperature gradient of 10 K/cm allows a growth rate of 0.3 {micro}m/min. Doping concentrations from 10{sup 16} to 2 {times} 10{sup 18} cm{sup {minus}3} are adjustable. Minority charge carrier life times of 5--10 {micro}s were determined in 30 {micro}m thick layers by TRMC (time resolved microwave conductivity) measurements. Additionally first growth results of Si-LPE on silicon seeded substrates will be presented.
- OSTI ID:
- 304372
- Report Number(s):
- CONF-970953--
- Country of Publication:
- United States
- Language:
- English
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