Light sources with bias tunable spectrum based on van der Waals interface transistors

Henck, Hugo; Mauro, Diego; Domaretskiy, Daniil; Philippi, Marc; Memaran, Shahriar; Zheng, Wenkai; Lu, Zhengguang; Shcherbakov, Dmitry; Lau, Chun Ning; Smirnov, Dmitry; Balicas, Luis; Watanabe, Kenji; Taniguchi, Takashi; Fal’ko, Vladimir I.; Gutiérrez-Lezama, Ignacio; Ubrig, Nicolas; Morpurgo, Alberto F.

doi:10.1038/s41467-022-31605-9

Title: Light sources with bias tunable spectrum based on van der Waals interface transistors

Journal Article · Thu Jul 07 00:00:00 EDT 2022 · Nature Communications

DOI:https://doi.org/10.1038/s41467-022-31605-9· OSTI ID:1904629

^[1]; Mauro, Diego ^[1];

^[1]; Philippi, Marc ^[1]; Memaran, Shahriar ^[2]; Zheng, Wenkai ^[2]; Lu, Zhengguang ^[2];

^[2]; Lau, Chun Ning ^[3];

^[3];

^[2];

^[4];

^[5]; Gutiérrez-Lezama, Ignacio ^[1];

^[1];

^[1]

University of Geneva (Switzerland)
National High Magnetic Field Laboratory, Tallahassee, FL (United States)
The Ohio State University, Columbus, OH (United States)
National Institute for Materials Science, Tsukuba (Japan)
University of Manchester (United Kingdom); Henry Royce Institute for Advanced Materials, Manchester (United Kingdom)

Light-emitting electronic devices are ubiquitous in key areas of current technology, such as data communications, solid-state lighting, displays, and optical interconnects. Controlling the spectrum of the emitted light electrically, by simply acting on the device bias conditions, is an important goal with potential technological repercussions. However, identifying a material platform enabling broad electrical tuning of the spectrum of electroluminescent devices remains challenging. Here, we propose light-emitting field-effect transistors based on van der Waals interfaces of atomically thin semiconductors as a promising class of devices to achieve this goal. We demonstrate that large spectral changes in room-temperature electroluminescence can be controlled both at the device assembly stage –by suitably selecting the material forming the interfaces– and on-chip, by changing the bias to modify the device operation point. Even though the precise relation between device bias and kinetics of the radiative transitions remains to be understood, our experiments show that the physical mechanism responsible for light emission is robust, making these devices compatible with simple large areas device production methods.

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Research Organization:: Florida State Univ., Tallahassee, FL (United States); The Ohio State University, Columbus, OH (United States)

Sponsoring Organization:: USDOE Office of Science (SC); Swiss National Science Foundation (SNSF); Engineering and Physical Sciences Research Council (EPSRC); National Science Foundation (NSF); Office Naval Research (ONR); MEXT, Japan; Japan Society for the Promotion of Science (JSPS)

Grant/Contract Number:: FG02-07ER46451; EP/S030719/1; DMR 1807969; 11997003; DMR-2039380; 2128945; DMR-1644779; JPMXP0112101001; 19H05790; 20H00354; 21H05233

OSTI ID:: 1904629

Journal Information:: Nature Communications, Vol. 13, Issue 1; ISSN 2041-1723

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

References (63)

A Pedagogical Perspective on Ambipolar FETs Kang, Moon Sung; Frisbie, C. Daniel ChemPhysChem, Vol. 14, Issue 8 https://doi.org/10.1002/cphc.201300014	journal	March 2013
Ambipolar light-emitting organic field-effect transistor Rost, Constance; Karg, Siegfried; Riess, Walter Applied Physics Letters, Vol. 85, Issue 9 https://doi.org/10.1063/1.1785290	journal	August 2004
Upconverted electroluminescence via Auger scattering of interlayer excitons in van der Waals heterostructures Binder, J.; Howarth, J.; Withers, F. Nature Communications, Vol. 10, Issue 1 https://doi.org/10.1038/s41467-019-10323-9	journal	May 2019
Mono- and Bilayer WS ₂ Light-Emitting Transistors Jo, Sanghyun; Ubrig, Nicolas; Berger, Helmuth Nano Letters, Vol. 14, Issue 4 https://doi.org/10.1021/nl500171v	journal	March 2014
Ionic gate spectroscopy of 2D semiconductors Gutiérrez-Lezama, Ignacio; Ubrig, Nicolas; Ponomarev, Evgeniy Nature Reviews Physics, Vol. 3, Issue 7 https://doi.org/10.1038/s42254-021-00317-2	journal	May 2021
Upconversion electroluminescence in InAs quantum dot light-emitting diodes Baumgartner, A.; Chaggar, A.; Patanè, A. Applied Physics Letters, Vol. 92, Issue 9 https://doi.org/10.1063/1.2885074	journal	March 2008
Ultrafast Charge Separation and Indirect Exciton Formation in a MoS ₂ –MoSe ₂ van der Waals Heterostructure Ceballos, Frank; Bellus, Matthew Z.; Chiu, Hsin-Ying ACS Nano, Vol. 8, Issue 12 https://doi.org/10.1021/nn505736z	journal	November 2014
Band alignment of two-dimensional semiconductors for designing heterostructures with momentum space matching Özçelik, V. Ongun; Azadani, Javad G.; Yang, Ce Physical Review B, Vol. 94, Issue 3 https://doi.org/10.1103/PhysRevB.94.035125	journal	July 2016
Effective Hexagonal Boron Nitride Passivation of Few-Layered InSe and GaSe to Enhance Their Electronic and Optical Properties Arora, Himani; Jung, Younghun; Venanzi, Tommaso ACS Applied Materials & Interfaces, Vol. 11, Issue 46 https://doi.org/10.1021/acsami.9b13442	journal	October 2019
Light-Emitting Field-Effect Transistor Based on a Tetracene Thin Film Hepp, Aline; Heil, Holger; Weise, Wieland Physical Review Letters, Vol. 91, Issue 15 https://doi.org/10.1103/PhysRevLett.91.157406	journal	October 2003
Giant Quantum Hall Plateau in Graphene Coupled to an InSe van der Waals Crystal Kudrynskyi, Z. R.; Bhuiyan, M. A.; Makarovsky, O. Physical Review Letters, Vol. 119, Issue 15 https://doi.org/10.1103/PhysRevLett.119.157701	journal	October 2017
Functional inks and printing of two-dimensional materials Hu, Guohua; Kang, Joohoon; Ng, Leonard W. T. Chemical Society Reviews, Vol. 47, Issue 9 https://doi.org/10.1039/C8CS00084K	journal	January 2018
Emerging Photoluminescence in Monolayer MoS₂ Splendiani, Andrea; Sun, Liang; Zhang, Yuanbo Nano Letters, Vol. 10, Issue 4, p. 1271-1275 https://doi.org/10.1021/nl903868w	journal	April 2010
Electroluminescence from indirect band gap semiconductor ReS ₂ Gutiérrez-Lezama, Ignacio; Reddy, Bojja Aditya; Ubrig, Nicolas 2D Materials, Vol. 3, Issue 4 https://doi.org/10.1088/2053-1583/3/4/045016	journal	October 2016
Polarization switching and electrical control of interlayer excitons in two-dimensional van der Waals heterostructures Ciarrocchi, Alberto; Unuchek, Dmitrii; Avsar, Ahmet Nature Photonics, Vol. 13, Issue 2 https://doi.org/10.1038/s41566-018-0325-y	journal	December 2018
Solution-processed ambipolar organic field-effect transistors and inverters Meijer, E. J.; de Leeuw, D. M.; Setayesh, S. Nature Materials, Vol. 2, Issue 10 https://doi.org/10.1038/nmat978	journal	September 2003
High-mobility field-effect transistors based on transition metal dichalcogenides Podzorov, V.; Gershenson, M. E.; Kloc, Ch. Applied Physics Letters, Vol. 84, Issue 17, p. 3301-3303 https://doi.org/10.1063/1.1723695	journal	April 2004
Electroluminescent Devices Based on 2D Semiconducting Transition Metal Dichalcogenides Wang, Junyong; Verzhbitskiy, Ivan; Eda, Goki Advanced Materials, Vol. 30, Issue 47 https://doi.org/10.1002/adma.201802687	journal	August 2018
Quantitative Determination of the Band Gap of WS ₂ with Ambipolar Ionic Liquid-Gated Transistors Braga, Daniele; Gutiérrez Lezama, Ignacio; Berger, Helmuth Nano Letters, Vol. 12, Issue 10 https://doi.org/10.1021/nl302389d	journal	September 2012
Improvement of growth parameters for Bridgman-grown InSe crystals Chevy, A. Journal of Crystal Growth, Vol. 67, Issue 1 https://doi.org/10.1016/0022-0248(84)90140-4	journal	June 1984
Electroluminescence from multi-particle exciton complexes in transition metal dichalcogenide semiconductors Paur, Matthias; Molina-Mendoza, Aday J.; Bratschitsch, Rudolf Nature Communications, Vol. 10, Issue 1 https://doi.org/10.1038/s41467-019-09781-y	journal	April 2019
Understanding ambipolar transport in MoS₂ field effect transistors: the substrate is the key Mootheri, Vivek; Leonhardt, Alessandra; Verreck, Devin Nanotechnology, Vol. 32, Issue 13 https://doi.org/10.1088/1361-6528/abd27a	journal	January 2021
Organic light-emitting transistors with an efficiency that outperforms the equivalent light-emitting diodes Capelli, Raffaella; Toffanin, Stefano; Generali, Gianluca Nature Materials, Vol. 9, Issue 6 https://doi.org/10.1038/nmat2751	journal	May 2010
Atomically Thin ${MoS}_{2}$ A New Direct-Gap Semiconductor Mak, Kin Fai; Lee, Changgu; Hone, James Physical Review Letters, Vol. 105, Issue 13, Article No.136805 https://doi.org/10.1103/PhysRevLett.105.136805	journal	September 2010
Color-tunable and high-efficiency organic light-emitting diode by adjusting exciton bilateral migration zone Liu, Shengqiang; Wu, Ruofan; Huang, Jiang Applied Physics Letters, Vol. 103, Issue 13 https://doi.org/10.1063/1.4823476	journal	September 2013
Room temperature upconversion electroluminescence from a mid-infrared In(AsN) tunneling diode Di Paola, D. M.; Lu, Q.; Repiso, E. Applied Physics Letters, Vol. 116, Issue 14 https://doi.org/10.1063/5.0002407	journal	April 2020
Endeavor of Iontronics: From Fundamentals to Applications of Ion‐Controlled Electronics Bisri, Satria Zulkarnaen; Shimizu, Sunao; Nakano, Masaki Advanced Materials, Vol. 29, Issue 25 https://doi.org/10.1002/adma.201607054	journal	June 2017
Ambipolar Light-Emitting Transistors on Chemical Vapor Deposited Monolayer MoS ₂ Ponomarev, Evgeniy; Gutiérrez-Lezama, Ignacio; Ubrig, Nicolas Nano Letters, Vol. 15, Issue 12 https://doi.org/10.1021/acs.nanolett.5b03885	journal	November 2015
Exciton physics and device application of two-dimensional transition metal dichalcogenide semiconductors Mueller, Thomas; Malic, Ermin npj 2D Materials and Applications, Vol. 2, Issue 1 https://doi.org/10.1038/s41699-018-0074-2	journal	September 2018
Electrical control of neutral and charged excitons in a monolayer semiconductor Ross, Jason S.; Wu, Sanfeng; Yu, Hongyi Nature Communications, Vol. 4, Issue 1 https://doi.org/10.1038/ncomms2498	journal	February 2013
InSe as a case between 3D and 2D layered crystals for excitons Shubina, T. V.; Desrat, W.; Moret, M. Nature Communications, Vol. 10, Issue 1 https://doi.org/10.1038/s41467-019-11487-0	journal	August 2019
Ambipolar MoS ₂ Thin Flake Transistors Zhang, Yijin; Ye, Jianting; Matsuhashi, Yusuke Nano Letters, Vol. 12, Issue 3 https://doi.org/10.1021/nl2021575	journal	February 2012
Infrared-to-violet tunable optical activity in atomic films of GaSe, InSe, and their heterostructures Terry, Daniel J.; Zólyomi, Viktor; Hamer, Matthew 2D Materials, Vol. 5, Issue 4 https://doi.org/10.1088/2053-1583/aadfc3	journal	September 2018
Temperature dependence of semiconductor band gaps O’Donnell, K. P.; Chen, X. Applied Physics Letters, Vol. 58, Issue 25 https://doi.org/10.1063/1.104723	journal	June 1991
Precise and reversible band gap tuning in single-layer MoSe ₂ by uniaxial strain Island, Joshua O.; Kuc, Agnieszka; Diependaal, Erik H. Nanoscale, Vol. 8, Issue 5 https://doi.org/10.1039/C5NR08219F	journal	January 2016
Light-emitting diodes by band-structure engineering in van der Waals heterostructures Withers, F.; Del Pozo-Zamudio, O.; Mishchenko, A. Nature Materials, Vol. 14, Issue 3 https://doi.org/10.1038/nmat4205	journal	February 2015
Actively variable-spectrum optoelectronics with black phosphorus Kim, Hyungjin; Uddin, Shiekh Zia; Lien, Der-Hsien Nature, Vol. 596, Issue 7871 https://doi.org/10.1038/s41586-021-03701-1	journal	August 2021
A bright future for organic field-effect transistors Muccini, Michele Nature Materials, Vol. 5, Issue 8 https://doi.org/10.1038/nmat1699	journal	August 2006
Guide to optical spectroscopy of layered semiconductors Shree, Shivangi; Paradisanos, Ioannis; Marie, Xavier Nature Reviews Physics, Vol. 3, Issue 1 https://doi.org/10.1038/s42254-020-00259-1	journal	December 2020
Layer-by-Layer Dielectric Breakdown of Hexagonal Boron Nitride Hattori, Yoshiaki; Taniguchi, Takashi; Watanabe, Kenji ACS Nano, Vol. 9, Issue 1 https://doi.org/10.1021/nn506645q	journal	December 2014
Spatial control of the recombination zone in an ambipolar light-emitting organic transistor Zaumseil, Jana; Friend, Richard H.; Sirringhaus, Henning Nature Materials, Vol. 5, Issue 1 https://doi.org/10.1038/nmat1537	journal	December 2005
Heterostructures of transition metal dichalcogenides Amin, B.; Singh, N.; Schwingenschlögl, U. Physical Review B, Vol. 92, Issue 7 https://doi.org/10.1103/PhysRevB.92.075439	journal	August 2015
Design of van der Waals interfaces for broad-spectrum optoelectronics Ubrig, Nicolas; Ponomarev, Evgeniy; Zultak, Johanna Nature Materials, Vol. 19, Issue 3 https://doi.org/10.1038/s41563-019-0601-3	journal	February 2020
Low-Frequency Noise Characteristics in Multilayer MoTe₂ FETs With Hydrophobic Amorphous Fluoropolymers Seo, Seung Gi; Hong, Jong Hun; Ryu, Jae Hyeon IEEE Electron Device Letters, Vol. 40, Issue 2 https://doi.org/10.1109/LED.2018.2889904	journal	February 2019
Out-of-plane orientation of luminescent excitons in two-dimensional indium selenide Brotons-Gisbert, Mauro; Proux, Raphaël; Picard, Raphaël Nature Communications, Vol. 10, Issue 1 https://doi.org/10.1038/s41467-019-11920-4	journal	September 2019
High Current Density in Light-Emitting Transistors of Organic Single Crystals Takenobu, Taishi; Bisri, Satria Zulkarnaen; Takahashi, Tetsuo Physical Review Letters, Vol. 100, Issue 6 https://doi.org/10.1103/PhysRevLett.100.066601	journal	February 2008
Broadband photocurrent spectroscopy and temperature dependence of band gap of few-layer indium selenide (InSe) Patil, Prasanna D.; Wasala, Milinda; Ghosh, Sujoy Emergent Materials, Vol. 4, Issue 4 https://doi.org/10.1007/s42247-021-00248-9	journal	June 2021
Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides Mak, Kin Fai; Shan, Jie Nature Photonics, Vol. 10, Issue 4 https://doi.org/10.1038/nphoton.2015.282	journal	March 2016
Experimental Demonstration of Continuous Electronic Structure Tuning via Strain in Atomically Thin MoS ₂ He, Keliang; Poole, Charles; Mak, Kin Fai Nano Letters, Vol. 13, Issue 6 https://doi.org/10.1021/nl4013166	journal	May 2013
Surface transport and band gap structure of exfoliated 2H-MoTe ₂ crystals Lezama, Ignacio Gutiérrez; Ubaldini, Alberto; Longobardi, Maria 2D Materials, Vol. 1, Issue 2 https://doi.org/10.1088/2053-1583/1/2/021002	journal	August 2014
Electronic and optical properties of two-dimensional InSe from a DFT-parametrized tight-binding model Magorrian, S. J.; Zólyomi, V.; Fal'ko, V. I. Physical Review B, Vol. 94, Issue 24 https://doi.org/10.1103/PhysRevB.94.245431	journal	December 2016
Light-emitting transistor: Light emission from InGaP/GaAs heterojunction bipolar transistors Feng, M.; Holonyak, N.; Hafez, W. Applied Physics Letters, Vol. 84, Issue 1 https://doi.org/10.1063/1.1637950	journal	January 2004
Heterostructures Produced from Nanosheet-Based Inks Withers, F.; Yang, H.; Britnell, L. Nano Letters, Vol. 14, Issue 7 https://doi.org/10.1021/nl501355j	journal	June 2014
Electrically Switchable Chiral Light-Emitting Transistor Zhang, Y. J.; Oka, T.; Suzuki, R. Science, Vol. 344, Issue 6185 https://doi.org/10.1126/science.1251329	journal	April 2014
Tightly bound trions in monolayer MoS2 Mak, Kin Fai; He, Keliang; Lee, Changgu Nature Materials, Vol. 12, Issue 3 https://doi.org/10.1038/nmat3505	journal	December 2012
Semiconducting van der Waals Interfaces as Artificial Semiconductors Ponomarev, Evgeniy; Ubrig, Nicolas; Gutiérrez-Lezama, Ignacio Nano Letters, Vol. 18, Issue 8 https://doi.org/10.1021/acs.nanolett.8b02066	journal	July 2018
Large-area and bright pulsed electroluminescence in monolayer semiconductors Lien, Der-Hsien; Amani, Matin; Desai, Sujay B. Nature Communications, Vol. 9, Issue 1 https://doi.org/10.1038/s41467-018-03218-8	journal	March 2018
Electrical control of interlayer exciton dynamics in atomically thin heterostructures Jauregui, Luis A.; Joe, Andrew Y.; Pistunova, Kateryna Science, Vol. 366, Issue 6467 https://doi.org/10.1126/science.aaw4194	journal	November 2019
Physics of Semiconductor Devices Sze, S. M.; Ng, Kwok K. https://doi.org/10.1002/0470068329	book	January 2007
Organic Light‐Emitting Transistors Entering a New Development Stage Qin, Zhengsheng; Gao, Haikuo; Dong, Huanli Advanced Materials, Vol. 33, Issue 31 https://doi.org/10.1002/adma.202007149	journal	May 2021
A transfer technique for high mobility graphene devices on commercially available hexagonal boron nitride Zomer, P. J.; Dash, S. P.; Tombros, N. Applied Physics Letters, Vol. 99, Issue 23 https://doi.org/10.1063/1.3665405	journal	December 2011
Observation of long-lived interlayer excitons in monolayer MoSe2–WSe2 heterostructures Rivera, Pasqual; Schaibley, John R.; Jones, Aaron M. Nature Communications, Vol. 6, Issue 1 https://doi.org/10.1038/ncomms7242	journal	February 2015
Determination of band offsets, hybridization, and exciton binding in 2D semiconductor heterostructures Wilson, Neil R.; Nguyen, Paul V.; Seyler, Kyle Science Advances, Vol. 3, Issue 2 https://doi.org/10.1126/sciadv.1601832	journal	February 2017

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