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Design and optimization of high temperature optocouplers as galvanic isolation

Journal Article · · Scientific Reports
 [1];  [2];  [2];  [3];  [3];  [2];  [2];  [2]
  1. Univ. of Arkansas, Fayetteville, AR (United States); OSTI
  2. Univ. of Arkansas, Fayetteville, AR (United States)
  3. HC SemiTek, Suzhou (China)
The commercial InGaN-based (blue and green) and AlGaInP-based (red) multiple quantum well (MQW) lighting emitting diodes (LEDs) were studied in a wide range of temperatures up to 800 K for their light emission and detection (i.e., LEDs operated under reverse bias as photodiodes (PDs)) characteristics. The results indicate the feasibility of integrating a pair of selected LEDs to fabricate high temperature (HT) optocouplers, which can be utilized as galvanic isolation to replace the bulky isolation transforms in the high-density power modules. A detailed study on LEDs and PDs were performed. The external quantum efficiency (EQE) of the LED and PDs were calculated. Higher relative external quantum efficiency (EQE) and lower efficiency droops with temperatures are obtained from the blue and green LEDs for display compared with the blue one for lighting and red LED for display. The blue for lighting and red for display devices show superior responsivity, specific detectivity (D*), and EQE compared with blue and green for display when operated as PDs. The results suggest that red LED devices for display can be used to optimize HT optocouplers due to the highest wavelength overlapping compared with others.
Research Organization:
Univ. of Arkansas, Fayetteville, AR (United States)
Sponsoring Organization:
US Army Research Laboratory (USARL); USDOE Office of Science (SC)
Grant/Contract Number:
SC0016485
OSTI ID:
1904416
Journal Information:
Scientific Reports, Journal Name: Scientific Reports Journal Issue: 1 Vol. 12; ISSN 2045-2322
Publisher:
Nature Publishing GroupCopyright Statement
Country of Publication:
United States
Language:
English

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