High Temperature and Power Dependent Photoluminescence Analysis on Commercial Lighting and Display LED Materials for Future Power Electronic Modules

Sabbar, Abbas; Madhusoodhanan, Syam; Al-Kabi, Sattar; Dong, Binzhong; Wang, Jiangbo; Atcitty, Stanley; Kaplar, Robert; Ding, Ding; Mantooth, Alan; Yu, Shui-Qing; Chen, Zhong

doi:10.1038/s41598-019-52126-4

High Temperature and Power Dependent Photoluminescence Analysis on Commercial Lighting and Display LED Materials for Future Power Electronic Modules

Journal Article · Wed Nov 13 23:00:00 EST 2019 · Scientific Reports

DOI:https://doi.org/10.1038/s41598-019-52126-4· OSTI ID:1595022

Sabbar, Abbas ^[1]; ^[1]; ^[1]; Dong, Binzhong ^[2]; Wang, Jiangbo ^[2]; Atcitty, Stanley ^[3]; Kaplar, Robert ^[3]; Ding, Ding ^[4]; Mantooth, Alan ^[1]; Yu, Shui-Qing ^[1]; Chen, Zhong ^[1]

Univ. of Arkansas, Fayetteville, AK (United States)
HC SemiTek, Zhangjing, Jiangsu (China)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Arizona State Univ., Phoenix, AZ (United States)

Commercial light emitting diode (LED) materials - blue (i.e., InGaN/GaN multiple quantum wells (MQWs) for display and lighting), green (i.e., InGaN/GaN MQWs for display), and red (i.e., Al_0.05Ga_0.45In_0.5P/Al_0.4Ga_0.1In_0.5P for display) are evaluated in range of temperature (77–800) K for future applications in high density power electronic modules. The spontaneous emission quantum efficiency (QE) of blue, green, and red LED materials with different wavelengths was calculated using photoluminescence (PL) spectroscopy. The spontaneous emission QE was obtained based on a known model so-called the ABC model. This model has been recently used extensively to calculate the internal quantum efficiency and its droop in the III-nitride LED. At 800 K, the spontaneous emission quantum efficiencies are around 40% for blue for lighting and blue for display LED materials, and it is about 44.5% for green for display LED materials. The spontaneous emission QE is approximately 30% for red for display LED material at 800 K. The advance reported in this paper evidences the possibility of improving high temperature optocouplers with an operating temperature of 500 K and above.

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000; SC0016485; NA0003525

OSTI ID:: 1595022

Alternate ID(s):: OSTI ID: 1657484

Report Number(s):: SAND--2019-14869J; 682353

Journal Information:: Scientific Reports, Journal Name: Scientific Reports Journal Issue: 1 Vol. 9; ISSN 2045-2322

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Investigation of the Electroluminescence Mechanism of GaN-Based Blue and Green Light-Emitting Diodes with Junction Temperature Range of 120–373 K Pan, Sai; Sun, Chenhong; Zhou, Yugang Applied Sciences, Vol. 10, Issue 2 https://doi.org/10.3390/app10020444	journal	January 2020

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