Bandgap recovery of monolayer MoS2 using defect engineering and chemical doping

Aryeetey, Frederick; Pourianejad, Sajedeh; Ayanbajo, Olubukola; Nowlin, Kyle; Ignatova, Tetyana; Aravamudhan, Shyam

doi:10.1039/d1ra02888j

Bandgap recovery of monolayer MoS₂ using defect engineering and chemical doping

Journal Article · Fri Jun 11 00:00:00 EDT 2021 · RSC Advances

DOI:https://doi.org/10.1039/d1ra02888j· OSTI ID:1903909

^[1]; ^[2]; ^[3]; Nowlin, Kyle ^[2]; ^[2]; ^[3]

North Carolina A & T State University, Greensboro, NC (United States); OSTI
University of North Carolina, Greensboro, NC (United States)
North Carolina A & T State University, Greensboro, NC (United States)

Two-dimensional transition metal dichalcogenide materials have created avenues for exciting physics with unique electronic and photonic applications. Among these materials, molybdenum disulfide is the most known due to extensive research in understanding its electronic and optical properties. In this paper, we report on the successful growth and modification of monolayer MoS₂(1L MoS₂) by controlling carrier concentration and manipulating bandgap in order to improve the efficiency of light emission. Atomic size MoS₂ vacancies were created using a Helium Ion Microscope, then the defect sites were doped with 2,3,5,6-tetrafluro7,7,8,8-tetracyanoquinodimethane (F4TCNQ). The carrier concentration in intrinsic (as-grown) and engineered 1L MoS₂ was calculated using Mass Action model. The results are in a good agreement with Raman and photoluminescence spectroscopy as well as Kelvin probe force microscopy characterizations.

View Accepted Manuscript (DOE)

Research Organization:: North Carolina A & T State University, Greensboro, NC (United States); University of North Carolina, Greensboro, NC (United States)

Sponsoring Organization:: National Science Foundation (NSF); USDOE

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1903909

Journal Information:: RSC Advances, Journal Name: RSC Advances Journal Issue: 34 Vol. 11; ISSN 2046-2069

Publisher:: Royal Society of ChemistryCopyright Statement

Country of Publication:: United States

Language:: English

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