A dielectric-defined lateral heterojunction in a monolayer semiconductor

Utama, M. Iqbal Bakti; Kleemann, Hans; Zhao, Wenyu; Ong, Chin Shen; da Jornada, Felipe H.; Qiu, Diana Y.; Cai, Hui; Li, Han; Kou, Rai; Zhao, Sihan; Wang, Sheng; Watanabe, Kenji; Taniguchi, Takashi; Tongay, Sefaattin; Zettl, Alex; Louie, Steven G.; Wang, Feng

doi:10.1038/s41928-019-0207-4

A dielectric-defined lateral heterojunction in a monolayer semiconductor

Journal Article · Mon Feb 11 00:00:00 EST 2019 · Nature Electronics

DOI:https://doi.org/10.1038/s41928-019-0207-4· OSTI ID:1616078

Utama, M. Iqbal Bakti ^[1]; Kleemann, Hans ^[2]; Zhao, Wenyu ^[3]; Ong, Chin Shen ^[1]; ^[1]; Qiu, Diana Y. ^[1]; Cai, Hui ^[4]; Li, Han ^[4]; ^[3]; Zhao, Sihan ^[3]; ^[1]; ^[5]; Taniguchi, Takashi ^[5]; Tongay, Sefaattin ^[4]; Zettl, Alex ^[6]; ^[1]; ^[6]

Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Univ. of California, Berkeley, CA (United States); Technische Universität Dresden, Dresden (Germany). Institut für Angewandte Photophysik
Univ. of California, Berkeley, CA (United States)
Arizona State Univ., Tempe, AZ (United States)
National Institute for Materials Science, Tsukuba (Japan)
Univ. of California, Berkeley, CA (United States). Kavli Energy NanoSciences Institute; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

Owing to their low dimensionality, two-dimensional semiconductors, such as monolayer molybdenum disulfide, have a range of properties that make them valuable in the development of nanoelectronics. For example, the electronic bandgap of these semiconductors is not an intrinsic physical parameter and can be engineered by manipulating the dielectric environment around the monolayer. Here in this paper we show that this dielectric-dependent electronic bandgap can be used to engineer a lateral heterojunction within a homogeneous MoS₂ monolayer. We visualize the heterostructure with Kelvin probe force microscopy and examine its influence on electrical transport experimentally and theoretically. We observe a lateral heterojunction with an approximately 90 meV band offset due to the differing degrees of bandgap renormalization of monolayer MoS₂ when it is placed on a substrate in which one segment is made from an amorphous fluoropolymer (Cytop) and another segment is made of hexagonal boron nitride. This heterostructure leads to a diode-like electrical transport with a strong asymmetric behaviour.

View Accepted Manuscript (DOE)

Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: Deutsche Forschungsgemeinschaft; Japan Society for the Promotion of Science (JSPS); National Science Foundation (NSF); Singapore National Research Foundation; USDOE Office of Science (SC)

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 1616078

Journal Information:: Nature Electronics, Journal Name: Nature Electronics Journal Issue: 2 Vol. 2; ISSN 2520-1131

Publisher:: Springer NatureCopyright Statement

Country of Publication:: United States

Language:: English

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