Quantification of defects engineered in single layer MoS2

Aryeetey, Frederick; Ignatova, Tetyana; Aravamudhan, Shyam

doi:10.1039/d0ra03372c

Quantification of defects engineered in single layer MoS₂

Journal Article · Tue Jun 16 00:00:00 EDT 2020 · RSC Advances

DOI:https://doi.org/10.1039/d0ra03372c· OSTI ID:1903908

Aryeetey, Frederick ^[1]; ^[2]; ^[2]

North Carolina A & T State University, Greensboro, NC (United States); OSTI
North Carolina A & T State University, Greensboro, NC (United States)

Atomic defects are controllably introduced in suspended single layer molybdenum disulfide (1L MoS₂) using helium ion beam. Vacancies exhibit one missing atom of molybdenum and a few atoms of sulfur. Quantification was done using a Scanning Transmission Electron Microscope (STEM) with an annular detector. Experimentally accessible inter-defect distance was employed to measure the degree of crystallinity in 1L MoS₂. A correlation between the appearance of an acoustic phonon mode in the Raman spectra and the inter-defect distance was established, which introduces a new methodology for quantifying defects in two-dimensional materials such as MoS₂.

View Accepted Manuscript (DOE)

Research Organization:: North Carolina A & T State University, Greensboro, NC (United States)

Sponsoring Organization:: National Science Foundation (NSF); USDOE Office of Science (SC)

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1903908

Journal Information:: RSC Advances, Journal Name: RSC Advances Journal Issue: 39 Vol. 10; ISSN 2046-2069

Publisher:: Royal Society of ChemistryCopyright Statement

Country of Publication:: United States

Language:: English

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