Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Heavy Ion Irradiation Effects on MoS2 Memtransistors.

Conference ·
DOI:https://doi.org/10.2172/1899528· OSTI ID:1899528

Abstract not provided.

Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
DOE Contract Number:
NA0003525
OSTI ID:
1899528
Report Number(s):
SAND2021-14854C; 701894
Country of Publication:
United States
Language:
English

Similar Records

Influence of Molecular Adsorption on MoS2 Memtransistor Switching Kinetics.
Conference · Sat Oct 01 00:00:00 EDT 2022 · OSTI ID:2005478

Environmental Effects on the Tribological Properties of MoS2 .
Conference · Mon Nov 01 00:00:00 EDT 2021 · OSTI ID:1898475

Preliminary Results from Heavy-Ion Irradiation of the Xilinx Versal ACAP.
Conference · Sun Aug 01 00:00:00 EDT 2021 · OSTI ID:1884175

Related Subjects