Microscopic piezoelectric behavior of clamped and membrane (001) PMN-30PT thin films
- Univ. of Wisconsin, Madison, WI (United States)
- Pennsylvania State Univ., University Park, PA (United States)
- Xi'an Jiaotong Univ., Shaanxi (China)
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Univ. of Liverpool (United Kingdom)
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA
- Cornell Univ., Ithaca, NY (United States); Leibniz Inst. for Crystal Growth (IKZ), Berlin (Germany)
- Argonne National Lab. (ANL), Argonne, IL (United States); Dublin City University (Ireland)
Bulk single-crystal relaxor-ferroelectrics, like Pb(Mg1/3Nb2/3)O-3-PbTiO3 (PMN-PT), are widely known for their large piezoelectricity. This is attributed to polarization rotation, which is facilitated by the presence of various crystal symmetries for compositions near a morphotropic phase boundary. Relaxor-ferroelectric thin films, which are necessary for low-voltage applications, suffer a reduction in their piezoelectric response due to clamping by the passive substrate. To understand the microscopic behavior of this adverse phenomenon, we employ the AC electric field driven in-operando synchrotron x-ray diffraction on patterned device structures to investigate the piezoelectric domain behavior under an electric field for both a clamped (001) PMN-PT thin film on Si and a (001) PMN-PT membrane released from its substrate. In the clamped film, the substrate inhibits the field-induced rhombohedral (R) to tetragonal (T) phase transition resulting in a reversible R to Monoclinic (M) transition with a reduced longitudinal piezoelectric coefficient d33 < 100 pm/V. Releasing the film from the substrate results in recovery of the R to T transition and results in a d33 > 1000 pm/V. Here, using diffraction with spatial mapping, we find that lateral constraints imposed by the boundary between the active and inactive materials also inhibit the R to T transition. Phase-field calculations on both clamped and released PMN-PT thin films simulate our experimental findings. Resolving the suppression of thin film piezoelectric response is critical to their application in piezo-driven technologies.
- Research Organization:
- Argonne National Laboratory (ANL), Argonne, IL (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); US Army Research Office (ARO); Gordon and Betty Moore Foundation; US Air Force Office of Scientific Research (AFOSR); National Science Fund (NSF); Samsung Electronics Company
- Grant/Contract Number:
- AC02-06CH11357; W911NF-17-1-0462; GBMF9065; FA9550-15-1-0334; DMR-1720415; FG02-06ER46327; DGE-1256259; GBMF9073
- OSTI ID:
- 1897903
- Alternate ID(s):
- OSTI ID: 1831306
- Journal Information:
- Applied Physics Letters, Vol. 119, Issue 20; ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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