Dynamics of the gold–silicon eutectic reaction studied at limited length scales using in situ $$\mathrm{TEM}$$ and $$\mathrm{STEM}$$
Journal Article
·
· Journal of Materials Research
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Georgia Institute of Technology, Atlanta, GA (United States)
- University of Illinois at Urbana-Champaign, IL (United States)
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- University of Illinois at Urbana-Champaign, IL (United States); University of Wisconsin, Madison, WI (United States)
- Georgia Institute of Technology, Atlanta, GA (United States); University of Illinois at Urbana-Champaign, IL (United States)
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); University of Illinois at Urbana-Champaign, IL (United States)
We report the dynamics of the gold–silicon eutectic reaction in limited dimensions were studied using in situ transmission electron microscopy and scanning transmission electron microscopy heating experiments. The phase transformation, viewed in both plan-view and cross-section of the film, occurs through a complex combination of dislocation and grain boundary motion and diffusion of silicon along gold grain boundaries, which results in a dramatic change in the microstructure of the film. The conversion observed in cross-section shows that the eutectic mixture forms at the Au–Si interface and proceeds into the Au film at a discontinuous growth rate. This complex process can lead to a variety of microstructures depending on sample geometry, heating temperature, and the ratio of gold to silicon which was found to have the largest impact on the eutectic microstructure. The eutectic morphology varied from dendrites to hollow rectangular structures to Au–Si eutectic agglomerates with increasing silicon to gold ratio.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- National Science Foundation (NSF); USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES); University of Illinois
- Grant/Contract Number:
- FG02-91ER45439; NA0003525; NA0003960
- OSTI ID:
- 1894613
- Report Number(s):
- SAND2022-13956J; 710767
- Journal Information:
- Journal of Materials Research, Journal Name: Journal of Materials Research Journal Issue: 21 Vol. 37; ISSN 0884-2914
- Publisher:
- Springer NatureCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Similar Records
TEM specimen preparation of semiconductor-PMMA-metal interfaces
TEM study of diamond films grown from fullerene precursors
Eutectic nucleation in hypoeutectic Al-Si alloys
Journal Article
·
Fri Nov 14 23:00:00 EST 2008
· Materials Characterization
·
OSTI ID:21137482
TEM study of diamond films grown from fullerene precursors
Conference
·
Tue Oct 31 23:00:00 EST 1995
·
OSTI ID:197793
Eutectic nucleation in hypoeutectic Al-Si alloys
Journal Article
·
Wed Oct 15 00:00:00 EDT 2008
· Materials Characterization
·
OSTI ID:21137467