Superconducting qubit devices based on metal silicides

Patent · 07 June 2022

OSTI ID:1893013

Black, Charles T.; Liu, Mingzhao

A qubit device for use in a quantum computing environment includes a semiconductor substrate, an insulating layer disposed on at least a portion of an upper surface of the substrate, and a transition metal silicide (TMSi) heterojunction disposed on at least a portion of an upper surface of the insulating layer. The TMSi heterojunction includes a link layer and at least first and second TMSi regions coupled with the link layer. The link layer may include a normal conductor, thereby forming a superconductor-normal conductor-superconductor (SNS) junction, or a geometric constriction, thereby forming a superconductor-geometric constriction-superconductor (ScS) junction. The link layer may form at least a portion of a channel including intrinsic or doped silicon.

• Research Organization: Brookhaven National Laboratory (BNL), Upton, NY (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: SC0012704
• Assignee: Brookhaven Science Associates, LLC (Upton, NY)
• Patent Number(s): 11,355,690
• Application Number: 16/811,278
• OSTI ID: 1893013
• Country of Publication: United States
• Language: English