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Title: Tunable and reconfigurable atomically thin heterostructures

Patent ·
OSTI ID:1892792

Heterocrystals of metal dichalcogenides and Bi2S3, Bi2Se3 or Bi2Te3 are presented, in which the metal dichalcogenides and Bi2S3, Bi2Se3 or Bi2Te3 do not largely retain their independent properties. These heterocrystals exhibit electronic and optical changes, which make them attractive for beyond-silicon electronics and optoelectronics. Particularly, these heterocrystals can be re-configured in a manner that allows bit writing and pattern drawing. Embodiments of these heterocrystals, methods of forming these heterocrystals, methods of reconfiguring the heterocrystals, information storage devices, optoelectronic circuits and photonic crystals are presented.

Research Organization:
Northeastern Univ., Boston, MA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC02-05CH11231; ECCS-1351424; FG02-07ER46352; SC0012575
Assignee:
Northwestern University (Boston, MA)
Patent Number(s):
11,293,116
Application Number:
16/326,856
OSTI ID:
1892792
Resource Relation:
Patent File Date: 08/23/2017
Country of Publication:
United States
Language:
English

References (8)

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Aberration Corrected High Angle Annular Dark Field (HAADF) Scanning Transmission Electron Microscopy (STEM) and In Situ Transmission Electron Microscopy (TEM) Study of Transition Metal Dichalcogenides (TMDs) journal August 2015
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Modulating Photoluminescence of Monolayer Molybdenum Disulfide by Metal-Insulator Phase Transition in Active Substrates journal June 2016
Controllable growth of layered selenide and telluride heterostructures and superlattices using molecular beam epitaxy journal January 2016