New Modulation and Impact of Transformer Leakage Inductance on Current-Source Solid-State Transformer

Zheng, Liran; Kandula, Rajendra Prasad; Kandasamy, Karthik; Divan, Deepak

doi:10.1109/tpel.2021.3101811

New Modulation and Impact of Transformer Leakage Inductance on Current-Source Solid-State Transformer

Journal Article · Wed Aug 04 00:00:00 EDT 2021 · IEEE Transactions on Power Electronics

DOI:https://doi.org/10.1109/tpel.2021.3101811· OSTI ID:1892477

^[1]; ^[2]; Kandasamy, Karthik ^[2]; ^[2]

Georgia Inst. of Technology, Atlanta, GA (United States); Georgia Institute of Technology
Georgia Inst. of Technology, Atlanta, GA (United States)

This article presents a novel modulation scheme for device voltage stress mitigation and comprehensive analysis of the impact of transformer leakage inductance in a current-source solid-state transformer (SST). Different from dual active bridge (DAB) SST, the operation of the current-source SST is similar to that of a flyback converter. The device bridge on only one side of the transformer is active to store energy into or release energy from the magnetizing inductance which acts as a current-source dc link. Such flyback operation with reverse-blocking switches can lead to additional device voltage stress and incomplete zero-voltage switching (ZVS) on the current-source soft-switching solid-state transformer (S4T) under conventional modulation. A new modulation scheme is proposed to address this issue. Moreover, different from the DAB, the leakage inductance of the medium-frequency transformer (MFT) in the S4T is a parasitic element similar to that in a matrix SST and can cause additional device voltage stress. Though the resonant capacitors, originally added to achieve ZVS, can absorb and recycle the leakage energy in the S4T, these capacitors need to be increased with larger leakage inductances to limit the voltage stress. However, large resonant capacitors can result in more lost duty cycles and reduced efficiency. The impact of such leakage inductance on device voltage stress is analyzed comprehensively, which is critical to guide future research and design of the S4T. Experimental results from S4T prototypes for DC-DC, multiport AC-DC, and AC-AC conversion with 1:1 and 4:1 MFT comprehensively verify the proposed concepts. Lastly, a case study of a three-phase AC-AC S4T over a power range from 1 kVA to 100 kVA each module reveals that the MFT leakage inductance should be less than 1% of the magnetizing inductance for safe operation.

View Accepted Manuscript (DOE)

Research Organization:: Georgia Inst. of Technology, Atlanta, GA (United States)

Sponsoring Organization:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

Grant/Contract Number:: AR0000899

OSTI ID:: 1892477

Journal Information:: IEEE Transactions on Power Electronics, Journal Name: IEEE Transactions on Power Electronics Journal Issue: 1 Vol. 37; ISSN 0885-8993

Publisher:: IEEECopyright Statement

Country of Publication:: United States

Language:: English

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