Device Voltage Stress from Ground Leakage Current in Medium-Voltage Solid-State Transformer

Zheng, Liran; Kandula, Rajendra Prasad; Divan, Deepak

doi:10.1109/tpel.2022.3203968

Device Voltage Stress from Ground Leakage Current in Medium-Voltage Solid-State Transformer

Journal Article · Mon Sep 05 00:00:00 EDT 2022 · IEEE Transactions on Power Electronics

DOI:https://doi.org/10.1109/tpel.2022.3203968· OSTI ID:1887733

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Georgia Inst. of Technology, Atlanta, GA (United States); Georgia Tech
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Georgia Inst. of Technology, Atlanta, GA (United States)

Grounding related issues are critical for safe and reliable operation of solid-state transformer (SST) in medium-voltage (MV) applications, e.g., solar photovoltaic and energy storage integration, date center, electric vehicle fast charging, etc. This article presents for the first time the issue of additional device voltage stress due to grounding-loop current in current-source SST, using the soft-switching solid-state transformer (S4T) as an example. The S4T features single-stage isolated AC-AC, AC-DC, or DC-DC conversion with full-range ZVS, derived from flyback converter or current-source converter (CSC). However, the flyback operation for CSC-based SST means that magnetizing current flows through the reverse-blocking devices on only one side of the medium-frequency transformer (MFT) at a time. Then, the voltages across the devices, especially those on the other side of the MFT, can be influenced by parasitic current. A parasitic model of a modular S4T (M-S4T) prototype is developed from direct measurements and datasheets. Using the developed parasitic model and equivalent circuits, the causes of the voltage stress are analyzed. A voltage-stress mitigation scheme of connecting additional grounding capacitors is proposed. Damping resistors are also installed to damp out the grounding-loop resonance. A robust parameter design of the proposed scheme is given. The existence of the voltage stress issue and the effectiveness of the proposed scheme are verified experimentally on an MV SiC M-S4T prototype with inherent parameter variations among the five modules in the prototype. Here, both single-module and stacked-module operation are demonstrated during steady state and dynamic conditions up to 4 kV peak.

View Accepted Manuscript (DOE)

Research Organization:: Georgia Institute of Technology, Atlanta, GA (United States)

Sponsoring Organization:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

Grant/Contract Number:: AR0000899

OSTI ID:: 1887733

Journal Information:: IEEE Transactions on Power Electronics, Journal Name: IEEE Transactions on Power Electronics Journal Issue: 1 Vol. 38; ISSN 0885-8993

Publisher:: IEEECopyright Statement

Country of Publication:: United States

Language:: English

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Device Voltage Stress from Ground Leakage Current in Medium-Voltage Solid-State Transformer

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