Reconfigurable Compute-In-Memory on Field-Programmable Ferroelectric Diodes

Liu, Xiwen; Ting, John; He, Yunfei; Fiagbenu, Merrilyn Mercy Adzo; Zheng, Jeffrey; Wang, Dixiong; Frost, Jonathan; Musavigharavi, Pariasadat; Esteves, Giovanni; Kisslinger, Kim; Anantharaman, Surendra B.; Stach, Eric A.; Olsson, III, Roy H.; Jariwala, Deep

doi:10.1021/acs.nanolett.2c03169

Reconfigurable Compute-In-Memory on Field-Programmable Ferroelectric Diodes

Journal Article · Mon Sep 19 00:00:00 EDT 2022 · Nano Letters

DOI:https://doi.org/10.1021/acs.nanolett.2c03169· OSTI ID:2440765

Liu, Xiwen ^[1]; Ting, John ^[1]; He, Yunfei ^[1]; Fiagbenu, Merrilyn Mercy Adzo ^[1]; Zheng, Jeffrey ^[2]; Wang, Dixiong ^[1]; Frost, Jonathan ^[1]; ^[3]; Esteves, Giovanni ^[4]; Kisslinger, Kim ^[5]; ^[1]; ^[6]; Olsson, III, Roy H. ^[1]; ^[1]

Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States, Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
Microsystems Engineering, Science and Applications (MESA), Sandia National Laboratories, Albuquerque, New Mexico 87185, United States
Brookhaven National Laboratory, Center for Functional Nanomaterials, Upton, New York 11973, United States
Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States, Laboratory for Research on the Structure of Matter, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States

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Sponsoring Organization:: USDOE

Grant/Contract Number:: SC0012704

OSTI ID:: 2440765

Alternate ID(s):: OSTI ID: 1889395
OSTI ID: 1898618

Journal Information:: Nano Letters, Journal Name: Nano Letters Journal Issue: 18 Vol. 22; ISSN 1530-6984

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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