Surface morphology and microstructure of Al-O alloys grown by ECR plasma deposition
The growth of polycrystalline and amorphous aluminum-oxygen alloy films using electron-beam evaporation of Al in the presence of an O{sub 2} electron-cyclotron-resonance (ECR) plasma was investigated for film compositions varying from 40% Al (Al{sub 2}O{sub 3}) to near 100% Al (AlO{sub x}). Processing parameters such as deposition temperature and ion energy were varied to study their effects on surface texture and film microstructure. The Al-rich films (AlO{sub x}) contain polycrystalline fcc Al grains with finely dispersed second-phase particles of {gamma}-Al{sub 2}O{sub 3} (1-2 nm in size). The surface roughness of these films was measured by atomic force microscopy and found to increase with sample bias and deposition temperature. Stoichiometric Al{sub 2}O{sub 3} films grown at 100{degrees}C and 400{degrees}C without an applied bias were amorphous, while an applied bias of -140 V formed a nanocrystalline {gamma}-Al{sub 2}O{sub 3} film at 400{degrees}C. The surface roughness of the Al{sub 2}O{sub 3} increased with temperature while ion irradiation produced a smoother surface.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States); Maine Univ., Orono, ME (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000; FG02-90ER45417
- OSTI ID:
- 188933
- Report Number(s):
- SAND--95-3060C; CONF-951155--29; ON: DE96004299
- Country of Publication:
- United States
- Language:
- English
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