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Molecular beam homoepitaxy of N-polar AlN on bulk AlN substrates

Journal Article · · AIP Advances
DOI:https://doi.org/10.1063/5.0100225· OSTI ID:1887907
 [1];  [1];  [1];  [2];  [1];  [1];  [3];  [4];  [4]
  1. School of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853, USA
  2. School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, USA
  3. Advanced Devices Technology Center, Asahi Kasei Corporation, Hibiya Mitsui Tower, 1-1-2 Yurakucho, Chiyodaku, Tokyo 100-8440, Japan
  4. School of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853, USA, Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA, Kavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, New York 14853, USA
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N-polar AlN epilayers were grown on the N-face of single-crystal bulk AlN substrates by plasma-assisted molecular beam epitaxy. A combination of in situ thermal deoxidation and Al-assisted thermal desorption at high temperature aided in removing native surface oxides and impurities from the N-polar surface of the substrate enabling successful homoepitaxy. Subsequent epitaxial growth of the AlN layer on the in situ cleaned substrates, grown in a sufficiently high Al droplet regime, exhibited smooth surface morphologies with clean and wide atomic steps. KOH etch studies confirmed the N-polarity of the homoepitaxial films. Secondary ion mass spectrometry profiles show Si and H impurity concentrations below the noise levels, whereas O and C impurity concentrations of [Formula: see text] and [Formula: see text] atoms/cm 3 are observed, respectively. Although the structural defect densities are low, they interestingly appear as inversion domains of different dimensionalities.

Sponsoring Organization:
USDOE
Grant/Contract Number:
SC0021230
OSTI ID:
1887907
Journal Information:
AIP Advances, Journal Name: AIP Advances Journal Issue: 9 Vol. 12; ISSN 2158-3226
Publisher:
American Institute of PhysicsCopyright Statement
Country of Publication:
United States
Language:
English

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