Correlative Nanoscale Imaging of Strained hBN Spin Defects

Curie, David A.; Krogel, Jaron T.; Cavar, Lukas; Solanki, Abhishek Bharatbhai; Upadhyaya, Pramey; Li, Tongcang; Pai, Yun-Yi; Chilcote, Michael; Iyer, Vasudevan Rajagopal; Puretzky, Alexander; Ivanov, Ilia N.; Du, Mao-Hua; Reboredo, Fernando A.; Lawrie, Benjamin

doi:10.1021/acsami.2c11886

Correlative Nanoscale Imaging of Strained hBN Spin Defects

Journal Article · Thu Sep 01 04:00:00 EDT 2022 · ACS Applied Materials and Interfaces

DOI:https://doi.org/10.1021/acsami.2c11886· OSTI ID:1887699

Curie, David A. ^[1]; ^[2]; Cavar, Lukas ^[3]; Solanki, Abhishek Bharatbhai ^[4]; Upadhyaya, Pramey ^[4]; ^[4]; ^[2]; Chilcote, Michael ^[2]; ^[2]; ^[2]; ^[2]; ^[2]; ^[2]; ^[2]

Vanderbilt Univ., Nashville, TN (United States)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Indiana Univ., Bloomington, IN (United States)
Purdue Univ., West Lafayette, IN (United States)

Spin defects like the negatively charged boron vacancy color center (V_B^-) in hexagonal boron nitride (hBN) may enable new forms of quantum sensing with near-surface defects in layered van der Waals heterostructures. Here, the effect of strain on V_B^- color centers in hBN is revealed with correlative cathodoluminescence and photoluminescence microscopies. Strong localized enhancement and redshifting of the V_B^- luminescence is observed at creases, consistent with density functional theory calculations showing V_B^- migration toward regions with moderate uniaxial compressive strain. The ability to manipulate spin defects with highly localized strain is critical to the development of practical 2D quantum devices and quantum sensors.

View Accepted Manuscript (DOE)

Research Organization:: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division; USDOE Office of Science (SC), Workforce Development for Teachers and Scientists (WDTS); National Science Foundation (NSF)

Grant/Contract Number:: AC05-00OR22725; SC0014664

OSTI ID:: 1887699

Journal Information:: ACS Applied Materials and Interfaces, Journal Name: ACS Applied Materials and Interfaces Journal Issue: 36 Vol. 14; ISSN 1944-8244

Publisher:: American Chemical Society (ACS)Copyright Statement

Country of Publication:: United States

Language:: English

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