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AlGaN High Electron Mobility Transistor for Power Switches and High Temperature Logic.

Conference ·
DOI:https://doi.org/10.2172/1882105· OSTI ID:1882105
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Abstract not provided.
Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
DOE Contract Number:
NA0003525
OSTI ID:
1882105
Report Number(s):
SAND2021-9139C; 697934
Country of Publication:
United States
Language:
English

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