Single-beam ion source enhanced growth of transparent conductive thin films
Journal Article
·
· Journal of Physics. D, Applied Physics
- Michigan State Univ., East Lansing, MI (United States); Scion Plasma LLC
- Michigan State Univ., East Lansing, MI (United States)
- Fraunhofer USA Center Midwest, East Lansing, MI (United States)
- Scion Plasma LLC, East Lansing, MI (United States)
A single-beam ion source was developed and used in combination with magnetron sputtering to modulate the film microstructure. The ion source emits a single beam of ions that interact with the deposited film and simultaneously enhances the magnetron discharge. The magnetron voltage can be adjusted over a wide range, from approximately 240 to 130 V, as the voltage of the ion source varies from 0 to 150 V, while the magnetron current increases accordingly. The low-voltage high-current magnetron discharge enables a 'soft sputtering mode', which is beneficial for thin-film growth. Indium tin oxide (ITO) thin films were deposited at room temperature using a combined single-beam ion source and magnetron sputtering. Furthermore, the ion beam resulted in the formation of polycrystalline ITO thin films with significantly reduced resistivity and surface roughness. Single-beam ion-source-enhanced magnetron sputtering has many potential applications in which low-temperature growth of thin films is required, such as coatings for organic solar cells.
- Research Organization:
- Scion Plasma LLC, East Lansing, MI (United States)
- Sponsoring Organization:
- National Science Foundation; USDOE
- Grant/Contract Number:
- EE0009018
- OSTI ID:
- 1880845
- Report Number(s):
- DOE-ScionPlasma-EE0009018; 1724941
- Journal Information:
- Journal of Physics. D, Applied Physics, Journal Name: Journal of Physics. D, Applied Physics Journal Issue: 39 Vol. 55; ISSN 0022-3727
- Publisher:
- IOP PublishingCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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