Quantitative Thermal Imaging of Single-Walled Carbon Nanotube Devices by Scanning Joule Expansion Microscopy

Xie, Xu; Grosse, Kyle L.; Song, Jizhou; Lu, Chaofeng; Dunham, Simon; Du, Frank; Islam, Ahmad E.; Li, Yuhang; Zhang, Yihui; Pop, Eric; Huang, Yonggang; King, William P.; Rogers, John A.

doi:10.1021/nn304083a

Quantitative Thermal Imaging of Single-Walled Carbon Nanotube Devices by Scanning Joule Expansion Microscopy

Journal Article · Fri Oct 12 00:00:00 EDT 2012 · ACS Nano

DOI:https://doi.org/10.1021/nn304083a· OSTI ID:1876053

Xie, Xu ^[1]; Grosse, Kyle L. ^[2]; Song, Jizhou ^[3]; Lu, Chaofeng ^[4]; Dunham, Simon ^[2]; Du, Frank ^[2]; Islam, Ahmad E. ^[2]; Li, Yuhang ^[5]; Zhang, Yihui ^[6]; Pop, Eric ^[7]; Huang, Yonggang ^[5]; King, William P. ^[2]; Rogers, John A. ^[2]

Univ. of Illinois at Urbana-Champaign, IL (United States); Univ. of Miami, Coral Gables, FL (United States); Zhejiang Univ., Hangzhou (China); Northwestern Univ., Evanston, IL (United States); Tsinghua Univ., Beijing (China); University of Illinois
Univ. of Illinois at Urbana-Champaign, IL (United States); Univ. of Miami, Coral Gables, FL (United States); Zhejiang Univ., Hangzhou (China); Northwestern Univ., Evanston, IL (United States); Tsinghua Univ., Beijing (China)
Univ. of Miami, Coral Gables, FL (United States)
Zhejiang Univ., Hangzhou (China)
Northwestern Univ., Evanston, IL (United States)
Northwestern Univ., Evanston, IL (United States); Tsinghua Univ., Beijing (China)
Univ. of Illinois at Urbana-Champaign, IL (United States)

Electrical generation of heat in single-walled carbon nanotubes (SWNTs) and subsequent thermal transport into the surroundings can critically affect the design, operation, and reliability of electronic and optoelectronic devices based on these materials. Here we investigate such heat generation and transport characteristics in perfectly aligned, horizontal arrays of SWNTs integrated into transistor structures. We present quantitative assessments of local thermometry at individual SWNTs in these arrays, evaluated using scanning Joule expansion microscopy. Measurements at different applied voltages reveal electronic behaviors, including metallic and semiconducting responses, spatial variations in diameter or chirality, and localized defect sites. Furthermore, analytical models, validated by measurements performed on different device structures at various conditions, enable accurate, quantitative extraction of temperature distributions at the level of individual SWNTs. Using current equipment, the spatial resolution and temperature precision are as good as ~100 nm and ~0.7 K, respectively.

View Accepted Manuscript (DOE)

Research Organization:: Univ. of Illinois at Urbana-Champaign, IL (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division

Grant/Contract Number:: FG02-07ER46453; FG02-07ER46471

OSTI ID:: 1876053

Journal Information:: ACS Nano, Journal Name: ACS Nano Journal Issue: 11 Vol. 6; ISSN 1936-0851

Publisher:: American Chemical Society (ACS)Copyright Statement

Country of Publication:: United States

Language:: English

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37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
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Quantitative Thermal Imaging of Single-Walled Carbon Nanotube Devices by Scanning Joule Expansion Microscopy

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