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GaN/AlGaN 2DEGs in the quantum regime: Magneto-transport and photoluminescence to 60 tesla

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/5.0033047· OSTI ID:1875797

Here, using high magnetic fields up to 60 T, we report magneto-transport and photoluminescence (PL) studies of a two-dimensional electron gas (2DEG) in a GaN/AlGaN heterojunction grown by molecular-beam epitaxy. Transport measurements demonstrate that the quantum limit can be exceeded (Landau level filling factor v<1) and show evidence for the v=2/3 fractional quantum Hall state. Simultaneous optical and transport measurements reveal synchronous quantum oscillations of both the PL intensity and the longitudinal resistivity in the integer quantum Hall regime. PL spectra directly reveal the dispersion of occupied Landau levels in the 2DEG and, therefore, the electron mass. These results demonstrate the utility of high (pulsed) magnetic fields for detailed measurements of quantum phenomena in high-density 2DEGs.

Research Organization:
Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
Sponsoring Organization:
USDOE; National Science Foundation (NSF); Office of Naval Research (ONR)
Grant/Contract Number:
89233218CNA000001
OSTI ID:
1875797
Report Number(s):
LA-UR-20-27565
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 26 Vol. 117; ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English

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