Defect Tolerance and Nanomechanics in Transistors that Use Semiconductor Nanomaterials and Ultrathin Dielectrics

Ahn, Jong-Hyun; Zhu, Zhengtao; Park, Sang-Il; Xiao, Jianliang; Huang, Yonggang; Rogers, John A.

doi:10.1002/adfm.200800176

Defect Tolerance and Nanomechanics in Transistors that Use Semiconductor Nanomaterials and Ultrathin Dielectrics

Journal Article · Fri Sep 05 04:00:00 EDT 2008 · Advanced Functional Materials

DOI:https://doi.org/10.1002/adfm.200800176· OSTI ID:1875122

Ahn, Jong-Hyun ^[1]; Zhu, Zhengtao ^[2]; Park, Sang-Il ^[2]; Xiao, Jianliang ^[3]; Huang, Yonggang ^[3]; Rogers, John A. ^[2]

Sungkyunkwan Univ., Suwon (Korea); University of Illinois
Univ. of Illinois at Urbana-Champaign, IL (United States)
Northwestern Univ., Evanston, IL (United States)

This paper describes experimental and theoretical studies of the mechanics of free-standing nanoribbons and membranes of single-crystalline silicon transfer printed onto patterned dielectric layers. The results show that analytical descriptions of the mechanics agree well with experimental data, and they explicitly reveal how the geometry of dielectric layers (i.e., the width and depth of the features of relief) and the silicon (i.e., the thickness and widths of the ribbons) affect mechanical bowing (i.e., “sagging”) in the suspended regions of the silicon. Here, this system is of practical importance in the use of semiconductor nanomaterials for electronic devices, because incomplete sagging near defects in gate dielectrics provides a level of robustness against electrical shorting in those regions which exceeds that associated with conventional deposition techniques for thin films. Field effect transistors formed using silicon nanoribbons transferred onto a range of ultrathin gate dielectrics, including patterned epoxy, organic self-assembled monolayers, and HfO₂, demonstrate these concepts.

Research Organization:: Univ. of Illinois at Urbana-Champaign, IL (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division

DOE Contract Number:: FG02-07ER46471

OSTI ID:: 1875122

Journal Information:: Advanced Functional Materials, Journal Name: Advanced Functional Materials Journal Issue: 17 Vol. 18; ISSN 1616-301X

Publisher:: Wiley

Country of Publication:: United States

Language:: English

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36 MATERIALS SCIENCE
dielectrics
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Defect Tolerance and Nanomechanics in Transistors that Use Semiconductor Nanomaterials and Ultrathin Dielectrics

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