Theory of the metastable injection-bleached E 3 c center in GaAs

Schultz, Peter A.; Hjalmarson, Harold P.

doi:10.1103/PhysRevB.105.224111

Theory of the metastable injection-bleached $E 3 c$ center in GaAs

Journal Article · 23 June 2022 · Physical Review B

DOI:https://doi.org/10.1103/PhysRevB.105.224111· OSTI ID:1873610

; Hjalmarson, Harold P.

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Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE; USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: NA0003525

OSTI ID:: 1873610

Alternate ID(s):: OSTI ID: 1877144

Report Number(s):: SAND2022-8636J; 224111

Journal Information:: Physical Review B, Journal Name: Physical Review B Journal Issue: 22 Vol. 105; ISSN 2469-9950; ISSN PRBMDO

Publisher:: American Physical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

References (21)

Ab initio characterization of arsenic vacancy diffusion pathways in GaAs with SIEST-A-RT El-Mellouhi, F.; Mousseau, N. Applied Physics A, Vol. 86, Issue 3 https://doi.org/10.1007/s00339-006-3761-3	journal	November 2006
Modeling charged defects inside density functional theory band gaps Schultz, Peter A.; Edwards, Arthur H. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 327 https://doi.org/10.1016/j.nimb.2013.09.046	journal	May 2014
Laplace-transform deep-level spectroscopy: The technique and its applications to the study of point defects in semiconductors Dobaczewski, L.; Peaker, A. R.; Bonde Nielsen, K. Journal of Applied Physics, Vol. 96, Issue 9 https://doi.org/10.1063/1.1794897	journal	November 2004
Vacancy formation in GaAs under different equilibrium conditions Bondarenko, V.; Gebauer, J.; Redmann, F. Applied Physics Letters, Vol. 87, Issue 16 https://doi.org/10.1063/1.2084330	journal	October 2005
Native defects in gallium arsenide Bourgoin, J. C.; von Bardeleben, H. J.; Stiévenard, D. Journal of Applied Physics, Vol. 64, Issue 9 https://doi.org/10.1063/1.341206	journal	November 1988
Laplace transform deep‐level transient spectroscopic studies of defects in semiconductors Dobaczewski, L.; Kaczor, P.; Hawkins, I. D. Journal of Applied Physics, Vol. 76, Issue 1 https://doi.org/10.1063/1.357126	journal	July 1994
Gallium interstitial contributions to diffusion in gallium arsenide Schick, Joseph T.; Morgan, Caroline G. AIP Advances, Vol. 1, Issue 3 https://doi.org/10.1063/1.3644937	journal	September 2011
Migration processes of the As interstitial in GaAs Wright, A. F.; Modine, N. A. Journal of Applied Physics, Vol. 120, Issue 21 https://doi.org/10.1063/1.4969049	journal	December 2016
The E 1– E 2 center in gallium arsenide is the divacancy Schultz, Peter A. Journal of Physics: Condensed Matter, Vol. 27, Issue 7 https://doi.org/10.1088/0953-8984/27/7/075801	journal	January 2015
Simple intrinsic defects in gallium arsenide Schultz, Peter A.; von Lilienfeld, O. Anatole Modelling and Simulation in Materials Science and Engineering, Vol. 17, Issue 8 https://doi.org/10.1088/0965-0393/17/8/084007	journal	November 2009
Laplace DLTS study of the fine structure and metastability of the radiation-induced E3 defect level in GaAs Taghizadeh, F.; Ostvar, K.; Auret, F. D. Semiconductor Science and Technology, Vol. 33, Issue 12 https://doi.org/10.1088/1361-6641/aae9a8	journal	November 2018
Theoretical study of intrinsic defects in cubic silicon carbide 3 C -SiC Schultz, Peter A.; Van Ginhoven, Renee M.; Edwards, Arthur H. Physical Review B, Vol. 103, Issue 19 https://doi.org/10.1103/PhysRevB.103.195202	journal	May 2021
Modified Broyden’s method for accelerating convergence in self-consistent calculations Johnson, D. D. Physical Review B, Vol. 38, Issue 18 https://doi.org/10.1103/PhysRevB.38.12807	journal	December 1988
Local electrostatic moments and periodic boundary conditions Schultz, Peter A. Physical Review B, Vol. 60, Issue 3 https://doi.org/10.1103/PhysRevB.60.1551	journal	July 1999
Charge-dependent migration pathways for the Ga vacancy in GaAs El-Mellouhi, Fedwa; Mousseau, Normand Physical Review B, Vol. 74, Issue 20 https://doi.org/10.1103/PhysRevB.74.205207	journal	November 2006
Bistability and Metastability of the Gallium Vacancy in GaAs: The Actuator of EL 2? Baraff, G. A.; Schluter, M. Physical Review Letters, Vol. 55, Issue 21 https://doi.org/10.1103/PhysRevLett.55.2340	journal	November 1985
Theoretical Evidence for an Optically Inducible Structural Transition of the Isolated As Antisite in GaAs: Identification and Explanation of EL 2 ? Dabrowski, Jaroslaw; Scheffler, Matthias Physical Review Letters, Vol. 60, Issue 21 https://doi.org/10.1103/PhysRevLett.60.2183	journal	May 1988
Metastability of the Isolated Arsenic-Antisite Defect in GaAs Chadi, D. J.; Chang, K. J. Physical Review Letters, Vol. 60, Issue 21 https://doi.org/10.1103/PhysRevLett.60.2187	journal	May 1988
Generalized Gradient Approximation Made Simple Perdew, John P.; Burke, Kieron; Ernzerhof, Matthias Physical Review Letters, Vol. 77, Issue 18, p. 3865-3868 https://doi.org/10.1103/PhysRevLett.77.3865	journal	October 1996
Charged Local Defects in Extended Systems Schultz, Peter A. Physical Review Letters, Vol. 84, Issue 9 https://doi.org/10.1103/PhysRevLett.84.1942	journal	February 2000
Theory of Defect Levels and the “Band Gap Problem” in Silicon Schultz, Peter A. Physical Review Letters, Vol. 96, Issue 24 https://doi.org/10.1103/PhysRevLett.96.246401	journal	June 2006

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