Skip to main content
OSTI.GOVU.S. Department of Energy Office of Scientific and Technical Information
U.S. Department of Energy
Office of Scientific and Technical Information
 

Theory of the metastable injection-bleached E 3 c center in GaAs

Journal Article · · Physical Review. B
 [1];  [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
+ Show Author Affiliations

The E3 transition in irradiated GaAs observed in deep level transient spectroscopy (DLTS) was recently discovered in Laplace-DLTS to encompass three distinct components. The component designated E3c was found to be metastable, reversibly bleached under minority carrier (hole) injection, with an introduction rate dependent upon Si doping density. It is shown through first-principles modeling that the E3c must be the intimate Si-vacancy pair, best described as a Si sitting in a divacancy Sivv. The bleached metastable state is enabled by a doubly site-shifting mechanism: Upon recharging, the defect undergoes a second site shift rather returning to its original E3c-active configuration via reversing the first site shift. Identification of this defect offers insights into the short-time annealing kinetics in irradiated GaAs.

Research Organization:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
Grant/Contract Number:
NA0003525
OSTI ID:
1873610
Alternate ID(s):
OSTI ID: 1877144
Report Number(s):
SAND2022-8636J; 707691; TRN: US2307376
Journal Information:
Physical Review. B, Vol. 105, Issue 22; ISSN 2469-9950
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English

References (20)

Laplace-transform deep-level spectroscopy: The technique and its applications to the study of point defects in semiconductors journal November 2004
Laplace DLTS study of the fine structure and metastability of the radiation-induced E3 defect level in GaAs journal November 2018
Generalized Gradient Approximation Made Simple journal October 1996
Modeling charged defects inside density functional theory band gaps journal May 2014
Migration processes of the As interstitial in GaAs journal December 2016
Charged Local Defects in Extended Systems journal February 2000
Vacancy formation in GaAs under different equilibrium conditions journal October 2005
Laplace transform deep‐level transient spectroscopic studies of defects in semiconductors journal July 1994
Theoretical Evidence for an Optically Inducible Structural Transition of the Isolated As Antisite in GaAs: Identification and Explanation of EL 2 ? journal May 1988
Theoretical study of intrinsic defects in cubic silicon carbide 3 C -SiC journal May 2021
Modified Broyden’s method for accelerating convergence in self-consistent calculations journal December 1988
Local electrostatic moments and periodic boundary conditions journal July 1999
Native defects in gallium arsenide journal November 1988
Bistability and Metastability of the Gallium Vacancy in GaAs: The Actuator of EL 2? journal November 1985
Theory of Defect Levels and the “Band Gap Problem” in Silicon journal June 2006
Gallium interstitial contributions to diffusion in gallium arsenide journal September 2011
The E 1– E 2 center in gallium arsenide is the divacancy journal January 2015
Simple intrinsic defects in gallium arsenide journal November 2009
Charge-dependent migration pathways for the Ga vacancy in GaAs journal November 2006
Ab initio characterization of arsenic vacancy diffusion pathways in GaAs with SIEST-A-RT journal November 2006

Similar Records

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
Electronic structure
First-principles calculations
Point defects