Edge termination in vertical GaN diodes: Electric field distribution probed by second harmonic generation

Cao, Yuke; Pomeroy, James W.; Uren, Michael J.; Yang, Feiyuan; Wang, Jingshan; Fay, Patrick; Kuball, Martin

doi:10.1063/5.0096755

Edge termination in vertical GaN diodes: Electric field distribution probed by second harmonic generation

Journal Article · Mon Jun 13 00:00:00 EDT 2022 · Applied Physics Letters

DOI:https://doi.org/10.1063/5.0096755· OSTI ID:1872812

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Centre for Device Thermography and Reliability, H.H. Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol BS8 1TL, United Kingdom
Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA

We characterized the electric field distribution of GaN-on-GaN p–n diodes with partially compensated ion-implanted edge termination (ET) using an electric field induced second harmonic generation technique (EFISHG). The distributed electric field from the anode to the outer edge of the ET demonstrates the effectiveness of the ET structure. However, EFISHG also shows that its effectiveness is strongly dependent on the acceptor charge distribution in the ET's partially compensated layer (PC). A generally lower amount of acceptor charge can be inferred from the measured electric field distribution resulting from excessive ion implantation energy or dose during ET fabrication and causing lower than optimal breakdown voltage. Localized field crowding can be observed when the remaining acceptors uncompensated by the implant in the PC layer are nonuniformly distributed around the periphery of the devices. Important information can be obtained from these direct electric field measurements and used for optimizing the device design and fabrication process.

View Accepted Manuscript (Publisher)

Sponsoring Organization:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

Grant/Contract Number:: AR0000446

OSTI ID:: 1872812

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 24 Vol. 120; ISSN 0003-6951

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

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