Power signatures of electric field and thermal switching regimes in memristive SET transitions

Mickel, Patrick R.; Hughart, David; Lohn, Andrew J.; Gao, Xujiao; Mamaluy, Denis; Marinella, Matthew J.

doi:10.1088/0022-3727/49/24/245103

Power signatures of electric field and thermal switching regimes in memristive SET transitions

Journal Article · 11 May 2016 · Journal of Physics. D, Applied Physics

DOI:https://doi.org/10.1088/0022-3727/49/24/245103· OSTI ID:1871986

Mickel, Patrick R. ^[1]; Hughart, David ^[1]; Lohn, Andrew J. ^[1]; Gao, Xujiao ^[1]; Mamaluy, Denis ^[1]; Marinella, Matthew J. ^[1]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

We present a study of the 'snap-back' regime of resistive switching hysteresis in bipolar TaO_x memristors, identifying power signatures in the electronic transport. Using a simple model based on the thermal and electric field acceleration of ionic mobilities, we provide evidence that the 'snap-back' transition represents a crossover from a coupled thermal and electric-field regime to a primarily thermal regime, and is dictated by the reconnection of a ruptured conducting filament. We discuss how these power signatures can be used to limit filament radius growth, which is important for operational properties such as power, speed, and retention.

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: NA0003525

OSTI ID:: 1871986

Alternate ID(s):: OSTI ID: 22672885

Report Number(s):: SAND2022-5694J; 705714

Journal Information:: Journal of Physics. D, Applied Physics, Journal Name: Journal of Physics. D, Applied Physics Journal Issue: 24 Vol. 49; ISSN 0022-3727

Publisher:: IOP PublishingCopyright Statement

Country of Publication:: United States

Language:: English

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