Hole in one: Pathways to deterministic single-acceptor incorporation in Si(100)-2 x 1

Campbell, Quinn; Baczewski, Andrew D.; Butera, R. E.; Misra, Shashank

doi:10.1116/5.0075467

Hole in one: Pathways to deterministic single-acceptor incorporation in Si(100)-2 x 1

Journal Article · Thu Mar 03 00:00:00 EST 2022 · AVS Quantum Science

DOI:https://doi.org/10.1116/5.0075467· OSTI ID:1870448

^[1]; Baczewski, Andrew D. ^[1]; ^[2]; Misra, Shashank ^[1]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Univ. of Maryland, College Park, MD (United States)

We report that stochastic incorporation kinetics can be a limiting factor in the scalability of semiconductor fabrication technologies using atomic-precision techniques. While these technologies have recently been extended from donors to acceptors, the extent to which kinetics will impact single-acceptor incorporation has yet to be assessed. To identify the precursor molecule and dosing conditions that are promising for deterministic incorporation, we develop and apply an atomistic model for the single-acceptor incorporation rates of several recently demonstrated molecules: diborane (B₂H₆), boron trichloride (BCl₃), and aluminum trichloride in both monomer (AlCl₃) and dimer forms (Al₂Cl₆). While all three precursors can realize single-acceptor incorporation, we predict that diborane is unlikely to realize deterministic incorporation, boron trichloride can realize deterministic incorporation with modest heating (50 °C), and aluminum trichloride can realize deterministic incorporation at room temperature. We conclude that both boron and aluminum trichloride are promising precursors for atomic-precision single-acceptor applications, with the potential to enable the reliable production of large arrays of single-atom quantum devices.

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE; USDOE Laboratory Directed Research and Development (LDRD) Program; USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: NA0003525

OSTI ID:: 1870448

Alternate ID(s):: OSTI ID: 1847198

Report Number(s):: SAND2022-3603J; 704496

Journal Information:: AVS Quantum Science, Journal Name: AVS Quantum Science Journal Issue: 1 Vol. 4; ISSN 2639-0213

Publisher:: American Institute of Physics (AIP) - American Vacuum SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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