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Title: ZrTe2/CrTe2: an epitaxial van der Waals platform for spintronics

Journal Article · · Nature Communications

Abstract The rapid discovery of two-dimensional (2D) van der Waals (vdW) quantum materials has led to heterostructures that integrate diverse quantum functionalities such as topological phases, magnetism, and superconductivity. In this context, the epitaxial synthesis of vdW heterostructures with well-controlled interfaces is an attractive route towards wafer-scale platforms for systematically exploring fundamental properties and fashioning proof-of-concept devices. Here, we use molecular beam epitaxy to synthesize a vdW heterostructure that interfaces two material systems of contemporary interest: a 2D ferromagnet (1T-CrTe 2 ) and a topological semimetal (ZrTe 2 ). We find that one unit-cell (u.c.) thick 1T-CrTe 2 grown epitaxially on ZrTe 2 is a 2D ferromagnet with a clear anomalous Hall effect. In thicker samples (12 u.c. thick CrTe 2 ), the anomalous Hall effect has characteristics that may arise from real-space Berry curvature. Finally, in ultrathin CrTe 2 (3 u.c. thickness), we demonstrate current-driven magnetization switching in a full vdW topological semimetal/2D ferromagnet heterostructure device.

Research Organization:
Johns Hopkins Univ., Baltimore, MD (United States); Energy Frontier Research Centers (EFRC) (United States). Institute for Quantum Matter (IQM)
Sponsoring Organization:
USDOE Office of Science (SC); National Science Foundation (NSF); National Institute of Standards and Technology (NIST)
Grant/Contract Number:
SC0019331; DMR-2039351; DMR-2011401; ECCS-2025124
OSTI ID:
1870200
Alternate ID(s):
OSTI ID: 1904343
Journal Information:
Nature Communications, Journal Name: Nature Communications Vol. 13 Journal Issue: 1; ISSN 2041-1723
Publisher:
Nature Publishing GroupCopyright Statement
Country of Publication:
United Kingdom
Language:
English

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