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Modeling and Assessment of Atomic Precision Advanced Manufacturing (APAM) Enabled Vertical Tunneling Field Effect Transistor.

Conference ·
DOI:https://doi.org/10.2172/1867273· OSTI ID:1867273

Abstract not provided.

Research Organization:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
DOE Contract Number:
NA0003525
OSTI ID:
1867273
Report Number(s):
SAND2021-11889C; 699985
Resource Relation:
Conference: Proposed for presentation at the International Conference on Simulation of Semiconductor Processes and Devices held September 27-29, 2021 in Dallas, TX.
Country of Publication:
United States
Language:
English