Particle-in-Cell Modeling of Low Pressure Capacitively Coupled Plasmas for High Aspect Ratio Etching
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Applied Materials, Inc., Santa Clara, CA (United States)
Plasma etching of semiconductors is an essential process in the production of microchips which enable nearly every aspect of modern life. Two frequencies of applied voltage are often used to provide control of both the ion fluxes and energy distribution.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Fusion Energy Sciences (FES); USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- NA0003525
- OSTI ID:
- 1853881
- Report Number(s):
- SAND2022-2699R; 704006
- Country of Publication:
- United States
- Language:
- English
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