Electron and hole mobility of rutile GeO2 from first principles: An ultrawide-bandgap semiconductor for power electronics

Bushick, K.; Mengle, K. A.; Chae, S.; Kioupakis, E.

doi:10.1063/5.0033284

Title: Electron and hole mobility of rutile GeO₂ from first principles: An ultrawide-bandgap semiconductor for power electronics

Journal Article · Fri Nov 06 00:00:00 EST 2020 · Applied Physics Letters

DOI:https://doi.org/10.1063/5.0033284· OSTI ID:1853467

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^[1]; Chae, S. ^[1];

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University of Michigan, Ann Arbor (United States). Dept. of Materials Science and Engineering

Rutile germanium dioxide (r-GeO₂) is a recently predicted ultrawide-bandgap semiconductor with potential applications in high-power electronic devices, for which the carrier mobility is an important material parameter that controls the device efficiency. We apply first-principles calculations based on density functional and density functional perturbation theory to investigate carrier-phonon coupling in r-GeO₂ and predict its phonon-limited electron and hole mobilities as a function of temperature and crystallographic orientation. The calculated carrier mobilities at 300 K are $μ_{elec, ⊥ \vec{c}} = 244$ cm² V^–1 s^–1, $μ_{elec, ∥ \vec{c}} = 377$ cm² V^–1 s^–1, $μ_{hole, ⊥ \vec{c}} = 27$ cm² V^–1 s^–1, and $μ_{hole, ∥ \vec{c}} = 29$ cm² V^–1 s^–1. At room temperature, carrier scattering is dominated by the low-frequency polar-optical phonon modes. The predicted Baliga figure of merit of n-type r-GeO₂ surpasses several incumbent semiconductors such as Si, SiC, GaN, and β-Ga₂O₃, demonstrating its superior performance in high-power electronic devices.

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Research Organization:: Univ. of Texas, Austin, TX (United States); Krell Institute, Ames, IA (United States); Univ. of California, Oakland, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF)

Grant/Contract Number:: SC0020129; SC0020347; AC02-05CH11231; DGE-1256260

OSTI ID:: 1853467

Alternate ID(s):: OSTI ID: 1706205

Journal Information:: Applied Physics Letters, Vol. 117, Issue 18; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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physics
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Title: Electron and hole mobility of rutile GeO2 from first principles: An ultrawide-bandgap semiconductor for power electronics

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Title: Electron and hole mobility of rutile GeO₂ from first principles: An ultrawide-bandgap semiconductor for power electronics