ORIGIN OF THE BLUE LUMINESCENCE OF β-Ga2O3
|
journal
|
August 1998 |
Hydrogen in Semiconductors
|
journal
|
August 2006 |
Device-Quality $\beta$-Ga$_{2}$O$_{3}$ Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy
|
journal
|
February 2012 |
Recent Development of Boron Nitride towards Electronic Applications
|
journal
|
April 2017 |
Wide-Gap Alloy: A Transparent p -Type Oxide
|
journal
|
February 2020 |
Hole Compensation Mechanism of P-Type GaN Films
|
journal
|
May 1992 |
GaN, AlN, and InN: A review
|
journal
|
July 1992 |
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|
journal
|
November 2004 |
Shallow donors with high n-type electrical conductivity in homoepitaxial deuterated boron-doped diamond layers
|
journal
|
June 2003 |
Hall-effect measurements of metalorganic vapor-phase epitaxy-grown p-type homoepitaxial GaN layers with various Mg concentrations
|
journal
|
February 2017 |
A polarization-induced 2D hole gas in undoped gallium nitride quantum wells
|
journal
|
September 2019 |
Ultrahigh thermal conductivity in isotope-enriched cubic boron nitride
|
journal
|
January 2020 |
The n-type doping of diamond: Present status and pending questions
|
journal
|
December 2007 |
Exciton structure in the u.v.-absorption edge of tetragonal GeO2
|
journal
|
March 1978 |
Gallium oxide (Ga 2 O 3 ) metal-semiconductor field-effect transistors on single-crystal β-Ga 2 O 3 (010) substrates
|
journal
|
January 2012 |
Carrier mobilities in silicon semi-empirically related to temperature, doping and injection level
|
journal
|
September 1981 |
Quasiparticle band structure and optical properties of rutile GeO 2 , an ultra-wide-band-gap semiconductor
|
journal
|
August 2019 |
Thermal conductivity of rutile germanium dioxide
|
journal
|
September 2020 |
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|
journal
|
February 2019 |
Electron and hole mobility of rutile GeO 2 from first principles: An ultrawide-bandgap semiconductor for power electronics
|
journal
|
November 2020 |
Role of hydrogen in doping of GaN
|
journal
|
March 1996 |
Infrared Lattice Vibrations and Free-Electron Dispersion in GaN
|
journal
|
January 1973 |
Epitaxial stabilization of rutile germanium oxide thin film by molecular beam epitaxy
|
journal
|
August 2020 |
Progress in efficient doping of high aluminum-containing group III-nitrides
|
journal
|
March 2018 |
Local environment of silicon in cubic boron nitride
|
journal
|
December 2013 |
Band structure and carrier effective masses of boron arsenide: Effects of quasiparticle and spin-orbit coupling corrections
|
journal
|
January 2019 |
Diamond power devices: state of the art, modelling, figures of merit and future perspective
|
journal
|
December 2019 |
Semiconducting cubic boron nitride
|
journal
|
February 1998 |
Alloy scattering of -type carriers in
|
journal
|
July 2006 |
Impact ionization in β-Ga 2 O 3
|
journal
|
August 2018 |
Laser ablation of Ge in an oxygen environment: plasma and film properties
|
journal
|
January 1992 |
Ultra-sensitive pressure dependence of bandgap of rutile-GeO 2 revealed by many body perturbation theory
|
journal
|
August 2015 |
First-principles study of point defects in LiGaO 2
|
journal
|
October 2019 |
Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges
|
journal
|
December 2017 |
Increased electron mobility in n-type Si-doped AlN by reducing dislocation density
|
journal
|
October 2006 |
Lack of quantum confinement in nanolayers
|
journal
|
August 2017 |
Role of self-trapping in luminescence and -type conductivity of wide-band-gap oxides
|
journal
|
February 2012 |
Preparation and characterization of germanium oxide thin films
|
journal
|
November 1989 |
Vacancy-impurity complexes and limitations for implantation doping of diamond
|
journal
|
July 2005 |
First-principles study of n- and p-type doping opportunities in LiGaO 2
|
journal
|
May 2020 |
A computational survey of semiconductors for power electronics
|
journal
|
January 2019 |
The intrinsic thermal conductivity of AIN
|
journal
|
January 1987 |
Structural change of GeO2 under pressure
|
journal
|
May 1994 |
The structure of amorphous, crystalline and liquid GeO 2
|
journal
|
October 2006 |
CO_2 Laser irradiation of GeO_2 planar waveguide fabricated by rf-sputtering
|
journal
|
January 2013 |
Lattice Vibration Spectra of Aluminum Nitride
|
journal
|
June 1967 |
Growth of SnO2 thin films by atomic layer deposition and chemical vapour deposition: A comparative study
|
journal
|
August 2006 |
Anisotropy of the electron effective mass in rutile SnO 2 determined by infrared ellipsometry : LPP modes in SnO
|
journal
|
October 2013 |
Infrared reflectance of single crystal tetragonal GeO2
|
journal
|
January 1972 |
Hole polarons and -type doping in boron nitride polymorphs
|
journal
|
September 2017 |
Activated reactive laser deposition of GeO 2 films
|
journal
|
August 1994 |
p-Type Ultrawide-Band-Gap Spinel ZnGa 2 O 4 : New Perspectives for Energy Electronics
|
journal
|
March 2020 |
First-principles study of high-field-related electronic behavior of group-III nitrides
|
journal
|
September 2014 |
Thin film properties of germanium oxide synthesized by pulsed laser sputtering in vacuum and oxygen environments
- Wolf, Paul J.; Christensen, Thomas M.; Coit, Nathan G.
-
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 11, Issue 5
https://doi.org/10.1116/1.578633
|
journal
|
September 1993 |
BerkeleyGW: A massively parallel computer package for the calculation of the quasiparticle and optical properties of materials and nanostructures
|
journal
|
June 2012 |
Quasiparticle self-consistent band structures and high-pressure phase transitions of and
|
journal
|
January 2021 |
Efficient ab initio calculations of electron-defect scattering and defect-limited carrier mobility
|
journal
|
March 2019 |
EPW: A program for calculating the electron–phonon coupling using maximally localized Wannier functions
|
journal
|
December 2010 |
Doping of AlGaN Alloys
|
journal
|
January 1999 |
Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN
|
journal
|
December 2014 |
Evaluation of the composition of reactively evaporated GeOx thin films from optical transmission and XPS data
|
journal
|
December 1988 |
Rutile GeO 2 : An ultrawide-band-gap semiconductor with ambipolar doping
|
journal
|
March 2019 |
almaBTE : A solver of the space–time dependent Boltzmann transport equation for phonons in structured materials
|
journal
|
November 2017 |
Microstructure characterisation of ALD-grown epitaxial SnO2 thin films
|
journal
|
January 2004 |
MOCVD homoepitaxy of Si-doped (010) β-Ga 2 O 3 thin films with superior transport properties
|
journal
|
June 2019 |
Enhanced doping efficiency of ultrawide band gap semiconductors by metal-semiconductor junction assisted epitaxy
|
journal
|
May 2019 |
Chemical and crystallographic characterization of crystals grown by chemical vapour transport in the Fe2O3 GeO2 system
|
journal
|
February 1984 |
On the feasibility of p-type Ga 2 O 3
|
journal
|
January 2018 |
P-type β-gallium oxide: A new perspective for power and optoelectronic devices
|
journal
|
December 2017 |
Assessing High-Throughput Descriptors for Prediction of Transparent Conductors
|
journal
|
October 2018 |
GERMANIUM. XXXIX. THE POLYMORPHISM OF GERMANIUM DIOXIDE 1
|
journal
|
June 1932 |
Electron-phonon interactions from first principles
|
journal
|
February 2017 |
Orientation relationship of polycrystalline Pd-doped SnO2 thin film deposits on sapphire substrates
|
journal
|
November 2008 |
Optical properties of germanium dioxide in the rutile structure
|
journal
|
June 2005 |
Martensitic transition in single-crystalline α-GeO2 at compression
|
journal
|
April 2000 |
First-principles study of structural, elastic, electronic and optical properties of rutile GeO2 and α-quartz GeO2
|
journal
|
October 2010 |
Space charge conduction and electrical behaviour of aluminium nitride single crystals
|
journal
|
May 1965 |
Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
|
journal
|
July 2000 |
Identification and design principles of low hole effective mass p-type transparent conducting oxides
|
journal
|
August 2013 |
Deep level centers in silicon carbide: A review
|
journal
|
February 1999 |
Intrinsic electron mobility limits in β -Ga 2 O 3
|
journal
|
November 2016 |
On the possibility of p-type SnO2
|
journal
|
January 2012 |
Correlation between optical properties and chemical composition of sputter-deposited germanium oxide (GeOx) films
|
journal
|
May 2014 |
Transition to a crystalline high-pressure phase in at room temperature
|
journal
|
April 2000 |
EPW: Electron–phonon coupling, transport and superconducting properties using maximally localized Wannier functions
|
journal
|
December 2016 |
Transparent conducting materials discovery using high-throughput computing
|
journal
|
June 2019 |
Anisotropic thermal conductivity in single crystal β-gallium oxide
|
journal
|
March 2015 |
Diamond and Cubic Boron Nitride: Properties, Growth and Applications
- Soltani, A.; Talbi, A.; Mortet, V.
-
2010 WIDE BANDGAP CUBIC SEMICONDUCTORS: FROM GROWTH TO DEVICES: Proceedings of the E-MRS Symposium∗ F∗, AIP Conference Proceedings
https://doi.org/10.1063/1.3518293
|
conference
|
January 2010 |
Photo-induced phenomena in sputtered GeO2 films
|
journal
|
January 2005 |
Physics of Semiconductor Devices
|
book
|
January 2007 |
First-principles calculations of the near-edge optical properties of β-Ga2O3
|
journal
|
November 2016 |
Top-seeded flux growth of tetragonal GeO2
|
journal
|
September 1970 |
A High-Resolution Diffraction and Spectroscopic Study of the Low-Temperature Phase Transformation of Hexagonal to Tetragonal GeO 2 with and without Alkali Hydroxide Promotion
|
journal
|
April 2011 |
Pressure-Induced Crossover between Diffusive and Displacive Mechanisms of Phase Transitions in Single-Crystalline
|
journal
|
April 2003 |
Shallow Valence Band of Rutile GeO 2 and P-type Doping
|
journal
|
November 2020 |