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Superposition of intra- and inter-layer excitons in twistronic MoSe 2 /WSe 2 bilayers probed by resonant Raman scattering

Journal Article · · 2D Materials

Abstract

Hybridisation of electronic bands of two-dimensional materials, assembled into twistronic heterostructures, enables one to tune their optoelectronic properties by selecting conditions for resonant interlayer hybridisation. Resonant interlayer hybridisation qualitatively modifies the excitons in such heterostructures, transforming these optically active modes into superposition states of interlayer and intralayer excitons. For MoSe2/WSe2heterostructures, strong hybridization of both single particle and excitonic states can occur via single particle tunnelling. Here we use resonance Raman scattering to provide direct evidence for the hybridisation of excitons in twistronic MoSe2/WSe2structures, by observing scattering of specific excitons by phonons in both WSe2and MoSe2. We also demonstrate that resonance Raman scattering spectroscopy opens up a wide range of possibilities for quantifying the layer composition of the superposition states of the exciton and the interlayer hybridisation parameters in heterostructures of two-dimensional materials.

Research Organization:
Univ. of Washington, Seattle, WA (United States)
Sponsoring Organization:
USDOE Office of Science (SC)
DOE Contract Number:
SC0018171
OSTI ID:
1852526
Journal Information:
2D Materials, Journal Name: 2D Materials Journal Issue: 3 Vol. 8; ISSN 2053-1583
Publisher:
IOP Publishing
Country of Publication:
United States
Language:
English

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