Observation of intravalley phonon scattering of 2s excitons in MoSe 2 and WSe 2 monolayers

McDonnell, Liam P.; Viner, Jacob J. S.; Rivera, Pasqual; Xu, Xiaodong; Smith, David C.

doi:10.1088/2053-1583/ab98f0

Observation of intravalley phonon scattering of 2s excitons in MoSe ₂ and WSe ₂ monolayers

Journal Article · Mon Jul 27 00:00:00 EDT 2020 · 2D Materials

DOI:https://doi.org/10.1088/2053-1583/ab98f0· OSTI ID:1852525

^[1]; ; Rivera, Pasqual; Xu, Xiaodong;

OSTI

Abstract

We present a high-resolution resonance Raman study of hBN encapsulated MoSe₂and WSe₂monolayers at 4 K using excitation energies from 1.6 eV to 2.25 eV. We report resonances with the WSe₂A2s and MoSe₂A2s and B2s excited Rydberg states despite their low oscillator strength. When resonant with the 2s states we identify new Raman peaks which are associated with intravalley scattering between different Rydberg states via optical phonons. By calibrating the Raman scattering efficiency and separately constraining the electric dipole matrix elements, we reveal that the scattering rates for k = 0 optical phonons are comparable for both 1s and 2s states despite differences in the envelope functions. We also observe multiple new dispersive Raman peaks including a peak at the WSe₂A2s resonance that demonstrates non-linear dispersion and peak-splitting behavior that suggests the dispersion relations for dark excitonic states at energies near the 2s state are extremely complex.

Research Organization:: Univ. of Washington, Seattle, WA (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

DOE Contract Number:: SC0018171

OSTI ID:: 1852525

Journal Information:: 2D Materials, Journal Name: 2D Materials Journal Issue: 4 Vol. 7; ISSN 2053-1583

Publisher:: IOP Publishing

Country of Publication:: United States

Language:: English

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